Effects of channel widths, thicknesses of active layer on the electrical and photosensing properties of the 6,13-bis(triisopropylsilylethynyl) pentacene transistors by thermal evaporation method: Comparison study

标题
Effects of channel widths, thicknesses of active layer on the electrical and photosensing properties of the 6,13-bis(triisopropylsilylethynyl) pentacene transistors by thermal evaporation method: Comparison study
作者
关键词
-
出版物
SYNTHETIC METALS
Volume 162, Issue 13-14, Pages 1210-1239
出版商
Elsevier BV
发表日期
2012-06-15
DOI
10.1016/j.synthmet.2012.04.034

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