Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium–Zirconium Oxide-Based Metal–Oxide–Semiconductor Structures

Logic Compatible High-Performance Ferroelectric Transistor Memory

(2022) Sourav Dutta et al.   IEEE ELECTRON DEVICE LETTERS

Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

(2022) Suraj S. Cheema et al.   NATURE

Wakeup-Free and Endurance-Robust Ferroelectric Field-Effect Transistor Memory Using High Pressure Annealing

(2021) Manh-Cuong Nguyen et al.   IEEE ELECTRON DEVICE LETTERS

The Impacts of Ferroelectric and Interfacial Layer Thicknesses on Ferroelectric FET Design

(2021) Nujhat Tasneem et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectric HfO2-based synaptic devices: recent trends and prospects

(2021) Shimeng Yu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Depletion induced depolarization field in Hf1−xZrxO2 metal-ferroelectric-semiconductor capacitors on germanium

(2020) C. Zacharaki et al.   APPLIED PHYSICS LETTERS

The Past, the Present, and the Future of Ferroelectric Memories

(2020) T. Mikolajick et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The future of ferroelectric field-effect transistor technology

(2020) Asif Islam Khan et al.   Nature Electronics

A Nitrided Interfacial Oxide for Interface State Improvement in Hafnium Zirconium Oxide-Based Ferroelectric Transistor Technology

(2018) Ava J. Tan et al.   IEEE ELECTRON DEVICE LETTERS

Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance

(2018) Kai Ni et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ultralow Defect Density at Sub-0.5 nm HfO2/SiGe Interfaces via Selective Oxygen Scavenging

(2018) Mahmut S. Kavrik et al.   ACS Applied Materials & Interfaces

Low interface trap density in scaled bilayer gate oxides on 2D materials via nanofog low temperature atomic layer deposition

(2018) Iljo Kwak et al.   APPLIED SURFACE SCIENCE

Negative Capacitance Transistors

(2018) Justin C. Wong et al.   PROCEEDINGS OF THE IEEE

Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?

(2012) Takashi Ando   Materials

Epitaxial SrO interfacial layers for HfO2–Si gate stack scaling

(2011) C. Marchiori et al.   APPLIED PHYSICS LETTERS

Phase transitions in ferroelectric silicon doped hafnium oxide

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS