Sensing Remote Bulk Defects through Resistance Noise in a Large-Area Graphene Field-Effect Transistor
出版年份 2022 全文链接
标题
Sensing Remote Bulk Defects through Resistance Noise in a Large-Area Graphene Field-Effect Transistor
作者
关键词
-
出版物
ACS Applied Materials & Interfaces
Volume -, Issue -, Pages -
出版商
American Chemical Society (ACS)
发表日期
2022-11-03
DOI
10.1021/acsami.2c14499
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- High-Responsivity Gate-Tunable Ultraviolet–Visible Broadband Phototransistor Based on Graphene–WS2 Mixed-Dimensional (2D-0D) Heterostructure
- (2022) Shubhrasish Mukherjee et al. ACS Applied Materials & Interfaces
- Electrical Low-Frequency 1/fγ Noise Due to Surface Diffusion of Scatterers on an Ultra-low-Noise Graphene Platform
- (2021) Masahiro Kamada et al. NANO LETTERS
- Effect of boron nitride defects and charge inhomogeneity on 1/f noise in encapsulated graphene
- (2021) Chandan Kumar et al. APPLIED PHYSICS LETTERS
- Revisiting the Mechanism of Electric Field Sensing in Graphene Devices
- (2021) Afsal Kareekunnan et al. ACS Omega
- A Quasi-Static Model of Silicon Substrate Effects in Graphene Field Effect Transistors
- (2017) Pierre-Antoine Haddad et al. IEEE ELECTRON DEVICE LETTERS
- High-Performance Graphene-Based Electrostatic Field Sensor
- (2017) Wenhui Wang et al. IEEE ELECTRON DEVICE LETTERS
- Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device
- (2017) Yuanyuan Shi et al. Nanoscale Research Letters
- Direct Observation of High Photoresponsivity in Pure Graphene Photodetectors
- (2017) Yanping Liu et al. Nanoscale Research Letters
- Tunable interacting composite fermion phases in a half-filled bilayer-graphene Landau level
- (2017) A. A. Zibrov et al. NATURE
- Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric
- (2017) Pengkun Xia et al. Scientific Reports
- Interfacial amplification for graphene-based position-sensitive-detectors
- (2017) Wen-Hui Wang et al. Light-Science & Applications
- Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device
- (2017) Yuanyuan Shi et al. Nanoscale Research Letters
- Direct Observation of High Photoresponsivity in Pure Graphene Photodetectors
- (2017) Yanping Liu et al. Nanoscale Research Letters
- Gate-Tunable Dirac Point of Molecular Doped Graphene
- (2016) Pablo Solís-Fernández et al. ACS Nano
- Robust graphene wet transfer process through low molecular weight polymethylmethacrylate
- (2016) Seonyeong Kim et al. CARBON
- Tunability of 1/f Noise at Multiple Dirac Cones in hBN Encapsulated Graphene Devices
- (2016) Chandan Kumar et al. NANO LETTERS
- Current crowding mediated large contact noise in graphene field-effect transistors
- (2016) Paritosh Karnatak et al. Nature Communications
- High-performance graphene photodetector using interfacial gating
- (2016) Xitao Guo et al. Optica
- Microscopic origin of low frequency noise in MoS2 field-effect transistors
- (2014) Subhamoy Ghatak et al. APL Materials
- Hofstadter’s butterfly and the fractal quantum Hall effect in moiré superlattices
- (2013) C. R. Dean et al. NATURE
- Low-frequency 1/f noise in graphene devices
- (2013) Alexander A. Balandin Nature Nanotechnology
- Raman spectroscopy as a versatile tool for studying the properties of graphene
- (2013) Andrea C. Ferrari et al. Nature Nanotechnology
- Determination of Work Function of Graphene under a Metal Electrode and Its Role in Contact Resistance
- (2012) Seung Min Song et al. NANO LETTERS
- Microscopic Mechanism of 1/f Noise in Graphene: Role of Energy Band Dispersion
- (2011) Atindra Nath Pal et al. ACS Nano
- Mobility-Dependent Low-Frequency Noise in Graphene Field-Effect Transistors
- (2011) Yan Zhang et al. ACS Nano
- A first principles theoretical examination of graphene-based field effect transistors
- (2011) James G. Champlain JOURNAL OF APPLIED PHYSICS
- Grains and grain boundaries in single-layer graphene atomic patchwork quilts
- (2011) Pinshane Y. Huang et al. NATURE
- Hysteresis in the resistance of a graphene device induced by charge modulation in the substrate
- (2010) J. C. Brant et al. APPLIED PHYSICS LETTERS
- Large low-frequency resistance noise in chemical vapor deposited graphene
- (2010) Atindra Nath Pal et al. APPLIED PHYSICS LETTERS
- Charge Noise in Graphene Transistors
- (2010) Iddo Heller et al. NANO LETTERS
- Boron nitride substrates for high-quality graphene electronics
- (2010) C. R. Dean et al. Nature Nanotechnology
- Ultralow noise field-effect transistor from multilayer graphene
- (2009) Atindra Nath Pal et al. APPLIED PHYSICS LETTERS
- Observation of the fractional quantum Hall effect in graphene
- (2009) Kirill I. Bolotin et al. NATURE
- Measurement of the quantum capacitance of graphene
- (2009) Jilin Xia et al. Nature Nanotechnology
- Resistance Noise in Electrically Biased Bilayer Graphene
- (2009) Atindra Nath Pal et al. PHYSICAL REVIEW LETTERS
- Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
- (2009) X. Li et al. SCIENCE
- Approaching ballistic transport in suspended graphene
- (2008) Xu Du et al. Nature Nanotechnology
- Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
- (2008) A. Das et al. Nature Nanotechnology
- Charged-impurity scattering in graphene
- (2008) J.-H. Chen et al. Nature Physics
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started