Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO 2 Ferroelectric Film

The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO2 Directly Deposited on Si(100)

(2019) Min Gee KIM et al.   IEICE TRANSACTIONS ON ELECTRONICS

Non-conventional mechanism of ferroelectric fatigue via cation migration

(2019) Anton V. Ievlev et al.   Nature Communications

Synthesis of Pure Brookite Nanorods in a Nonaqueous Growth Environment

(2019) Mahmoud Hezam et al.   Crystals

Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

(2017) Juan Gao et al.   JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

High-K materials and metal gates for CMOS applications

(2015) John Robertson et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al2O3 Passivation Layer

(2014) Gang He et al.   ACS Applied Materials & Interfaces

Effect of Si substrate on interfacial SiO2 scavenging in HfO2/SiO2/Si stacks

(2014) Xiuyan Li et al.   APPLIED PHYSICS LETTERS

Microstructure optimization and optical and interfacial properties modulation of sputtering-derived HfO2 thin films by TiO2 incorporation

(2014) J.W. Zhang et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates

(2013) Gang He et al.   SURFACE SCIENCE REPORTS

HfO2-assisted SiO2 reduction in HfO2/SiO2/Si stacks

(2013) Xiuyan Li et al.   THIN SOLID FILMS

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

(2012) Stefan Mueller et al.   ADVANCED FUNCTIONAL MATERIALS

Gate Engineering in TiN/La/TiN and TiLaN Metal Layers on Atomic-Layer-Deposited $\hbox{HfO}_{2}/\hbox{Si}$

(2012) Hyo Kyeom Kim et al.   IEEE ELECTRON DEVICE LETTERS

Temperature dependence of SiO2 film growth with plasma-enhanced atomic layer deposition

(2012) Akiko Kobayashi et al.   THIN SOLID FILMS

Capacitance-voltage modeling of metal-ferroelectric-semiconductor capacitors based on epitaxial oxide heterostructures

(2011) Woong Choi et al.   APPLIED PHYSICS LETTERS

Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

(2011) J. Müller et al.   APPLIED PHYSICS LETTERS

Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

(2010) Roman Engel-Herbert et al.   JOURNAL OF APPLIED PHYSICS

Frequency-dependent Capacitance-Voltage and Conductance-Voltage Characteristics of Low-dielectric-constant SiOC(-H) Thin Films Deposited by Using Plasma-enhanced Chemical Vapor Deposition

(2010) Chi Kyu Choi et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY