Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

出版年份 2017 全文链接

标题

作者

关键词

Germanium, Trimethylaluminum, Atomic layer deposition, Electrical properties

出版物

Volume 33, Issue 8, Pages 901-906

出版商

Elsevier BV

发表日期

2017-04-19

DOI

10.1016/j.jmst.2017.04.021

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