Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al2O3 Passivation Layer

出版年份 2014 全文链接

标题

作者

关键词

出版物

Volume 6, Issue 24, Pages 22013-22025

出版商

American Chemical Society (ACS)

发表日期

2014-12-04

DOI

10.1021/am506351u

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