Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer

AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency

(2021) Paula Palacios et al.   ELECTRONICS LETTERS

Applicability of Field Plate in Double Channel GaN HEMT for Radio-Frequency and Power-Electronic Applications

(2021) Nisha Chugh et al.   Silicon

Characterization of the Electrical Properties of a Double Heterostructure GaN/AlGaN Epitaxial Layer with an AlGaN Interlayer

(2021) Qingzhi Meng et al.   JOURNAL OF ELECTRONIC MATERIALS

Suppression of Current Dispersion in AlGaN/GaN MISHFETs with in-situ AlN Passivation Layer

(2021) Jun-Hyeok Lee et al.   SOLID-STATE ELECTRONICS

True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching

(2021) Joseph P. Kozak et al.   IEEE ELECTRON DEVICE LETTERS

High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer

(2021) Jeong-Gil Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Optimization of Oxygen Plasma Treatment on Ohmic Contact for AlGaN/GaN HEMTs on High-Resistivity Si Substrate

(2021) Pengfei Li et al.   Electronics

A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor

(2021) Qingzhi Meng et al.   Materials

Suppression of short-channel effects in normally-off GaN MOSFETs with deep recessed-gate structures

(2020) Daimotsu Kato et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Trapping Effects on Leakage and Current Collapse in AlGaN/GaN HEMTs

(2020) Niketa Sharma et al.   JOURNAL OF ELECTRONIC MATERIALS

Simulation design of a high-breakdown-voltage p-GaN-gate GaN HEMT with a hybrid AlGaN buffer layer for power electronics applications

(2020) Yong Liu et al.   Journal of Computational Electronics

Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects

(2020) Joseph Pinchbeck et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

A 2-D Modeling of Fe doped Dual Material Gate AlGaN/AlN/GaN High Electron Mobility Transistors for High Frequency Applications

(2019) K. Sowmya et al.   AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS

High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study

(2019) Shahed Reza et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Photon emission and current-collapse suppression of AlGaN/GaN field-effect transistors with photonic–ohmic drain at high temperatures

(2018) Xi Tang et al.   Applied Physics Express

Improvement of Au-Free, Ti/Al/W Ohmic Contact on AlGaN/GaN Heterostructure Featuring a Thin-Ti Layer and Low Temperature Annealing

(2018) Takahiro Yoshida et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Ultraviolet photoresponse of ZnO nanostructured AlGaN/GaN HEMTs

(2016) Salahuddin Dogar et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

(2015) Xiao-Yu Zhang et al.   Chinese Physics B

Photoelectrochemical passivated ZnO-based nanorod structured glucose biosensors using gate-recessed AlGaN/GaN ion-sensitive field-effect-transistors

(2015) Ching-Ting Lee et al.   SENSORS AND ACTUATORS B-CHEMICAL

Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors

(2014) Chongbiao Luan et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Buckling and Delamination of Ti/Cu/Si Thin Film During Annealing

(2014) Qijing Lin et al.   JOURNAL OF ELECTRONIC MATERIALS

Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors

(2013) Yuen-Yee Wong et al.   APPLIED PHYSICS LETTERS

Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection

(2012) Resham Thapa et al.   APPLIED PHYSICS LETTERS

Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

(2012) Chongbiao Luan et al.   APPLIED PHYSICS LETTERS

The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs

(2012) Xiao-Dong Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Modeling and experimental study on sensing response of an AlGaN/GaN HEMT-based hydrogen sensor

(2012) Zhibo Guo et al.   SENSORS AND ACTUATORS B-CHEMICAL

Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etching

(2009) Liang Wang et al.   APPLIED PHYSICS LETTERS