Device simulation of GeSe homojunction and vdW GeSe/GeTe heterojunction TFETs for high-performance application

标题
Device simulation of GeSe homojunction and vdW GeSe/GeTe heterojunction TFETs for high-performance application
作者
关键词
-
出版物
Journal of Computational Electronics
Volume 21, Issue 2, Pages 401-410
出版商
Springer Science and Business Media LLC
发表日期
2022-03-28
DOI
10.1007/s10825-022-01867-z

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