Impact of Layer Alignment on the Behavior of MoS2−ZrS2 Tunnel Field-Effect Transistors: An Ab Initio Study

标题
Impact of Layer Alignment on the Behavior of MoS2−ZrS2 Tunnel Field-Effect Transistors: An Ab Initio Study
作者
关键词
-
出版物
Physical Review Applied
Volume 8, Issue 3, Pages -
出版商
American Physical Society (APS)
发表日期
2017-09-23
DOI
10.1103/physrevapplied.8.034017

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