Impact of Layer Alignment on the Behavior of MoS2−ZrS2 Tunnel Field-Effect Transistors: An Ab Initio Study
出版年份 2017 全文链接
标题
Impact of Layer Alignment on the Behavior of
MoS2−ZrS2
Tunnel Field-Effect Transistors: An
Ab Initio
Study
作者
关键词
-
出版物
Physical Review Applied
Volume 8, Issue 3, Pages -
出版商
American Physical Society (APS)
发表日期
2017-09-23
DOI
10.1103/physrevapplied.8.034017
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Lateral Versus Vertical Growth of Two-Dimensional Layered Transition-Metal Dichalcogenides: Thermodynamic Insight into MoS2
- (2016) Shun-Li Shang et al. NANO LETTERS
- Hydrogenation-controlled phase transition on two-dimensional transition metal dichalcogenides and their unique physical and catalytic properties
- (2016) Yuanju Qu et al. Scientific Reports
- Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1–xHfxO2 Thin Film without Using Noble Metal Electrode
- (2015) Ji-Hoon Ahn et al. ACS Applied Materials & Interfaces
- Controlled Doping of Large-Area Trilayer MoS2with Molecular Reductants and Oxidants
- (2015) Alexey Tarasov et al. ADVANCED MATERIALS
- Dielectric Engineered Tunnel Field-Effect Transistor
- (2015) Hesameddin Ilatikhameneh et al. IEEE ELECTRON DEVICE LETTERS
- Ab-Initio Simulation of van der Waals MoTe2–SnS2 Heterotunneling FETs for Low-Power Electronics
- (2015) Aron Szabo et al. IEEE ELECTRON DEVICE LETTERS
- Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides
- (2015) Filip A. Rasmussen et al. Journal of Physical Chemistry C
- Ab initiosimulation of single- and few-layerMoS2transistors: Effect of electron-phonon scattering
- (2015) Áron Szabó et al. PHYSICAL REVIEW B
- Direct epitaxial CVD synthesis of tungsten disulfide on epitaxial and CVD graphene
- (2015) G. V. Bianco et al. RSC Advances
- III-V Heterostructure Nanowire Tunnel FETs
- (2015) Erik Lind et al. IEEE Journal of the Electron Devices Society
- An atlas of two-dimensional materials
- (2014) Pere Miró et al. CHEMICAL SOCIETY REVIEWS
- An updated version of wannier90: A tool for obtaining maximally-localised Wannier functions
- (2014) Arash A. Mostofi et al. COMPUTER PHYSICS COMMUNICATIONS
- Tunnel Field-Effect Transistors: State-of-the-Art
- (2014) Hao Lu et al. IEEE Journal of the Electron Devices Society
- Atomistic full-band simulations of monolayer MoS2 transistors
- (2013) Jiwon Chang et al. APPLIED PHYSICS LETTERS
- Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
- (2013) Cheng Gong et al. APPLIED PHYSICS LETTERS
- Pseudopotentials for high-throughput DFT calculations
- (2013) Kevin F. Garrity et al. COMPUTATIONAL MATERIALS SCIENCE
- Van der Waals heterostructures
- (2013) A. K. Geim et al. NATURE
- Tunneling Transistors Based on Graphene and 2-D Crystals
- (2013) Debdeep Jena PROCEEDINGS OF THE IEEE
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Van der Waals density functionals applied to solids
- (2011) Jiří Klimeš et al. PHYSICAL REVIEW B
- Low-Voltage Tunnel Transistors for Beyond CMOS Logic
- (2010) Alan C. Seabaugh et al. PROCEEDINGS OF THE IEEE
- QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
- (2009) Paolo Giannozzi et al. JOURNAL OF PHYSICS-CONDENSED MATTER
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search