Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

(2016) Y. Cao et al.   APPLIED PHYSICS LETTERS

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

(2014) Zachary Bryan et al.   APPLIED PHYSICS LETTERS

High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

(2014) Erin C. H. Kyle et al.   JOURNAL OF APPLIED PHYSICS

Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

(2014) J. L. Lyons et al.   PHYSICAL REVIEW B

Gallium nitride devices for power electronic applications

(2013) B Jayant Baliga   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

(2012) Zachary Bryan et al.   JOURNAL OF ELECTRONIC MATERIALS

Strain in Si doped GaN and the Fermi level effect

(2011) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

(2010) Yu Saitoh et al.   Applied Physics Express

Carbon impurities and the yellow luminescence in GaN

(2010) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition

(2008) S. Mita et al.   JOURNAL OF APPLIED PHYSICS