Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications

Recent Advances in GaN‐Based Power HEMT Devices

(2021) Jiaqi He et al.   Advanced Electronic Materials

The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

(2021) Theresia Knobloch et al.   Nature Electronics

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory

(2021) Xiwen Liu et al.   NANO LETTERS

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

(2020) Jinshui Miao et al.   NANO LETTERS

Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor

(2020) Bing Ren et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Boron Nitride as a Passivation Capping Layer for AlGaN/GaN High Electron Mobility Transistors

(2020) Gun Hee Lee et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Comparative study on performance of AlGaN/GaN MS-HEMTs with SiNx, SiOx, and SiNO surface passivation

(2020) Kai-Yuan Cheng et al.   SOLID-STATE ELECTRONICS

Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

(2019) Yan Wang et al.   NATURE

Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing

(2019) Seung Hee Lee et al.   Scientific Reports

Photonics with hexagonal boron nitride

(2019) Joshua D. Caldwell et al.   Nature Reviews Materials

Defect-Mediated In-Plane Electrical Conduction in Few-Layer sp2-Hybridized Boron Nitrides

(2018) Dong Yeong Kim et al.   ACS Applied Materials & Interfaces

Qualification of GaN microwave transistors for the European Space Agency Biomass mission

(2018) A. Barnes et al.   MICROELECTRONICS RELIABILITY

AlGaN/GaN MIS-HEMTs of Very-Low ${V}_{\sf th$ Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator

(2017) Zhili Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Isotope engineering of van der Waals interactions in hexagonal boron nitride

(2017) T. Q. P. Vuong et al.   NATURE MATERIALS

Analysis of X-ray absorption spectra of the K and L 2 , 3 edges of GaN within the FP-LAPW method

(2016) Gabriela B. Grad et al.   APPLIED RADIATION AND ISOTOPES

Mixed-dimensional van der Waals heterostructures

(2016) Deep Jariwala et al.   NATURE MATERIALS

A high-power solid state amplifier for Galileo satellite system exploiting European GaN technology

(2016) Rocco Giofré et al.   International Journal of Microwave and Wireless Technologies

Synthesis of large-area multilayer hexagonal boron nitride for high material performance

(2015) Soo Min Kim et al.   Nature Communications

The Near Edge Structure of Hexagonal Boron Nitride

(2014) Nicholas L. McDougall et al.   MICROSCOPY AND MICROANALYSIS

Black Phosphorus Radio-Frequency Transistors

(2014) Han Wang et al.   NANO LETTERS

Surface chemical and local electronic properties of Al_xGa_1-xN epi-layers grown by MOCVD

(2014) Shuchang Wang et al.   OPTICS EXPRESS

Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices

(2012) Ki Kang Kim et al.   ACS Nano

Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices

(2012) S. J. Haigh et al.   NATURE MATERIALS

Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride

(2011) Jiamin Xue et al.   NATURE MATERIALS

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology