Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor

标题
Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor
作者
关键词
α, -BN/, h, -BN, AlGaN/GaN, HEMTs
出版物
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 829, Issue -, Pages 154542
出版商
Elsevier BV
发表日期
2020-02-29
DOI
10.1016/j.jallcom.2020.154542

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