A type-II WSe2/HfSe2 van der Waals heterostructure with adjustable electronic and optical properties

Electric field control of Rashba spin splitting in 2D NIIIXVI (N  =  Ga, In; X  =  S, Se, Te) monolayer

(2020) Weiwei Ju et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Electronic structures and strain responses of group VA/VA two-dimensional van der Waals heterostructures

(2020) Long Lin et al.   VACUUM

Modulating geometric, electronic, gas sensing and catalytic properties of single-atom Pd supported on divacancy and N-doped graphene sheets

(2020) Yanan Tang et al.   APPLIED SURFACE SCIENCE

Multifunctional Lateral Transition‐Metal Disulfides Heterojunctions

(2020) Yipeng An et al.   ADVANCED FUNCTIONAL MATERIALS

Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two-Dimensional WSe2/MoTe2 Stack Channel

(2020) Sam Park et al.   ACS Nano

Tunable electronic, optical, and spintronic properties in InSe/MTe2 (M = Pd, Pt) van der Waals heterostructures

(2020) Donghui Wang et al.   VACUUM

Electrical Conduction at the Interface between Insulating van der Waals Materials

(2019) Yuta Kashiwabara et al.   ADVANCED FUNCTIONAL MATERIALS

Strain effects on phase transitions in transition metal dichalcogenides

(2019) Seoung-Hun Kang et al.   CURRENT APPLIED PHYSICS

Effect of structural defects and S-doped on electronic structure and magnetic properties of HfSe2 monolayer

(2019) Xu Zhao et al.   JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

A two-dimensional MoS2/WSe2 van der Waals heterostructure for enhanced photoelectric performance

(2019) Keyu Si et al.   APPLIED SURFACE SCIENCE

Design lateral heterostructure of monolayer ZrS 2 and HfS 2 from first principles calculations

(2018) Junhui Yuan et al.   APPLIED SURFACE SCIENCE

Electric field analyses on monolayer semiconductors: the example of InSe

(2018) Xue-Peng Wang et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Electric-field tunable electronic properties and Schottky contact of graphene/phosphorene heterostructure

(2018) Huynh V. Phuc et al.   VACUUM

Two-dimensional electronic transport and surface electron accumulation in MoS2

(2018) M. D. Siao et al.   Nature Communications

A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications

(2017) Congxin Xia et al.   Journal of Materials Chemistry A

MoS2/Si Heterojunction with Vertically Standing Layered Structure for Ultrafast, High-Detectivity, Self-Driven Visible-Near Infrared Photodetectors

(2015) Liu Wang et al.   ADVANCED FUNCTIONAL MATERIALS

Functionalization of Liquid-Exfoliated Two-Dimensional 2H-MoS2

(2015) Claudia Backes et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy

(2015) K. E. Aretouli et al.   APPLIED PHYSICS LETTERS

Two-dimensional transition metal dichalcogenide (TMD) nanosheets

(2015) Manish Chhowalla et al.   CHEMICAL SOCIETY REVIEWS

MoS 2 and semiconductors in the flatland

(2015) Oleg V. Yazyev et al.   Materials Today

Metallic 1T phase MoS2 nanosheets as supercapacitor electrode materials

(2015) Muharrem Acerce et al.   Nature Nanotechnology

Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures

(2015) Pasqual Rivera et al.   Nature Communications

Semiconductor Composites: Strategies for Enhancing Charge Carrier Separation to Improve Photocatalytic Activity

(2013) Roland Marschall   ADVANCED FUNCTIONAL MATERIALS

High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

(2013) Wei Wu et al.   APPLIED PHYSICS LETTERS

Band offsets and heterostructures of two-dimensional semiconductors

(2013) Jun Kang et al.   APPLIED PHYSICS LETTERS

Graphene-Like Two-Dimensional Materials

(2013) Mingsheng Xu et al.   CHEMICAL REVIEWS

Van der Waals heterostructures

(2013) A. K. Geim et al.   NATURE

A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu

(2010) Stefan Grimme et al.   JOURNAL OF CHEMICAL PHYSICS

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

First-principles study of two- and one-dimensional honeycomb structures of boron nitride

(2009) M. Topsakal et al.   PHYSICAL REVIEW B

The two-dimensional phase of boron nitride: Few-atomic-layer sheets and suspended membranes

(2008) D. Pacilé et al.   APPLIED PHYSICS LETTERS