标题
Electric field analyses on monolayer semiconductors: the example of InSe
作者
关键词
-
出版物
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 20, Issue 10, Pages 6945-6950
出版商
Royal Society of Chemistry (RSC)
发表日期
2018-02-08
DOI
10.1039/c7cp07270h
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Charge Transfer and Functionalization of Monolayer InSe by Physisorption of Small Molecules for Gas Sensing
- (2017) Yongqing Cai et al. Journal of Physical Chemistry C
- Engineering two-dimensional electronics by semiconductor defects
- (2017) Dan Wang et al. Nano Today
- Native defects and substitutional impurities in two-dimensional monolayer InSe
- (2017) Dan Wang et al. Nanoscale
- Charging assisted structural phase transitions in monolayer InSe
- (2017) Liangzhi Kou et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Tailoring of electromagnetic field localizations by two-dimensional graphene nanostructures
- (2017) Ze-Bo Zheng et al. Light-Science & Applications
- The Critical Role of Substrate in Stabilizing Phosphorene Nanoflake: A Theoretical Exploration
- (2016) Junfeng Gao et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices
- (2016) A. Politano et al. Nanoscale
- High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
- (2016) Denis A. Bandurin et al. Nature Nanotechnology
- Surface functionalization of two-dimensional metal chalcogenides by Lewis acid–base chemistry
- (2016) Sidong Lei et al. Nature Nanotechnology
- Atomically phase-matched second-harmonic generation in a 2D crystal
- (2016) Mervin Zhao et al. Light-Science & Applications
- Atomically thin optical lenses and gratings
- (2016) Jiong Yang et al. Light-Science & Applications
- Quantum Confinement and Gas Sensing of Mechanically Exfoliated GaSe
- (2016) Yecun Wu et al. Advanced Materials Technologies
- The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals
- (2016) G. W. Mudd et al. Scientific Reports
- High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures
- (2015) Garry W. Mudd et al. ADVANCED MATERIALS
- Two-Dimensional Indium Selenides Compounds: An Ab Initio Study
- (2015) L. Debbichi et al. Journal of Physical Chemistry Letters
- Electric-Field Tunable Band Offsets in Black Phosphorus and MoS2 van der Waals p-n Heterostructure
- (2015) Le Huang et al. Journal of Physical Chemistry Letters
- Boron based two-dimensional crystals: theoretical design, realization proposal and applications
- (2015) Xian-Bin Li et al. Nanoscale
- Electric field induced gap modification in ultrathin blue phosphorus
- (2015) Barun Ghosh et al. PHYSICAL REVIEW B
- Monolayer II-VI semiconductors: A first-principles prediction
- (2015) Hui Zheng et al. PHYSICAL REVIEW B
- Determination of Formation and Ionization Energies of Charged Defects in Two-Dimensional Materials
- (2015) Dan Wang et al. PHYSICAL REVIEW LETTERS
- Angle-selective perfect absorption with two-dimensional materials
- (2015) Linxiao Zhu et al. Light-Science & Applications
- Evolution of the Electronic Band Structure and Efficient Photo-Detection in Atomic Layers of InSe
- (2014) Sidong Lei et al. ACS Nano
- Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities via the Suppression of Carrier Scattering from a Dielectric Interface
- (2014) Wei Feng et al. ADVANCED MATERIALS
- Photoluminescence properties and exciton dynamics in monolayer WSe2
- (2014) Tengfei Yan et al. APPLIED PHYSICS LETTERS
- High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response
- (2014) Srinivasa Reddy Tamalampudi et al. NANO LETTERS
- Electronic structure, optical properties, and lattice dynamics in atomically thin indium selenide flakes
- (2014) Juan F. Sánchez-Royo et al. Nano Research
- Electrons and phonons in single layers of hexagonal indium chalcogenides fromab initiocalculations
- (2014) V. Zólyomi et al. PHYSICAL REVIEW B
- Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement
- (2013) Garry W. Mudd et al. ADVANCED MATERIALS
- Bandgap engineering of rippled MoS2 monolayer under external electric field
- (2013) Jingshan Qi et al. APPLIED PHYSICS LETTERS
- Vacancy-mediated three-center four-electron bonds in GeTe-Sb2Te3phase-change memory alloys
- (2013) Alexander V. Kolobov et al. PHYSICAL REVIEW B
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Tailoring band gap in GaN sheet by chemical modification and electric field: Ab initio calculations
- (2011) Qian Chen et al. APPLIED PHYSICS LETTERS
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Tunable band gaps in bilayer transition-metal dichalcogenides
- (2011) Ashwin Ramasubramaniam et al. PHYSICAL REVIEW B
- Graphene photonics and optoelectronics
- (2010) F. Bonaccorso et al. Nature Photonics
- Electric field enhanced hydrogen storage on polarizable materials substrates
- (2010) J. Zhou et al. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started