Strain-tuning PtSe2 for high ON-current lateral tunnel field-effect transistors

Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition

(2021) Tanmoy Das et al.   ACS Applied Materials & Interfaces

High Current Density in Monolayer MoS2 Doped by AlOx

(2021) Connor J. McClellan et al.   ACS Nano

Efficient strain modulation of 2D materials via polymer encapsulation

(2020) Zhiwei Li et al.   Nature Communications

Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications

(2020) Zhiwei Peng et al.   Light-Science & Applications

Using Anisotropic Insulators to Engineer the Electrostatics of Conventional and Tunnel Field-Effect Transistors

(2020) Robert K. A. Bennett et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Charge Plasma-Based Monolayer Transition Metal Dichalcogenide Tunnel FET

(2019) Prabhat Kumar Dubey et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap

(2019) Abinaya Krishnaraja et al.   APPLIED PHYSICS LETTERS

PtSe2 Field-Effect Transistors: New Opportunities for Electronic Devices

(2018) AbdulAziz AlMutairi et al.   IEEE ELECTRON DEVICE LETTERS

Ab Initio Simulation of Band-to-Band Tunneling FETs With Single- and Few-Layer 2-D Materials as Channels

(2018) Aron Szabo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Complementary Black Phosphorus Tunneling Field-Effect Transistors

(2018) Peng Wu et al.   ACS Nano

High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature

(2016) Chanyoung Yim et al.   ACS Nano

From Fowler–Nordheim to Nonequilibrium Green’s Function Modeling of Tunneling

(2016) Hesameddin Ilatikhameneh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Design strategy of two-dimensional material field-effect transistors: Engineering the number of layers in phosphorene FETs

(2016) Demin Yin et al.   JOURNAL OF APPLIED PHYSICS

Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2

(2016) David Lloyd et al.   NANO LETTERS

Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors

(2016) Tarek A. Ameen et al.   Scientific Reports

Ab-Initio Simulation of van der Waals MoTe2–SnS2 Heterotunneling FETs for Low-Power Electronics

(2015) Aron Szabo et al.   IEEE ELECTRON DEVICE LETTERS

Monolayer PtSe2, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt

(2015) Yeliang Wang et al.   NANO LETTERS

A subthermionic tunnel field-effect transistor with an atomically thin channel

(2015) Deblina Sarkar et al.   NATURE

Toward Low-Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides

(2014) Saptarshi Das et al.   ACS Nano

An updated version of wannier90: A tool for obtaining maximally-localised Wannier functions

(2014) Arash A. Mostofi et al.   COMPUTER PHYSICS COMMUNICATIONS

Effect of Drain Doping Profile on Double-Gate Tunnel Field-Effect Transistor and its Influence on Device RF Performance

(2014) Vikas Vijayvargiya et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Figure of merit for and identification of sub-60 mV/decade devices

(2013) William G. Vandenberghe et al.   APPLIED PHYSICS LETTERS

Elastic Properties of Freely Suspended MoS2Nanosheets

(2012) Andres Castellanos-Gomez et al.   ADVANCED MATERIALS

Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets

(2012) Kuo-Hsing Kao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Scaling Length Theory of Double-Gate Interband Tunnel Field-Effect Transistors

(2012) Lu Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Stretching and Breaking of Ultrathin MoS2

(2011) Simone Bertolazzi et al.   ACS Nano

Tunnel field-effect transistors as energy-efficient electronic switches

(2011) Adrian M. Ionescu et al.   NATURE

Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

(2010) Woo Young Choi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling

(2010) Mathieu Luisier et al.   JOURNAL OF APPLIED PHYSICS

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials

(2009) Paolo Giannozzi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Fringing-Induced Drain Current Improvement in the Tunnel Field-Effect Transistor With High- $\kappa$ Gate Dielectrics

(2008) Martin Schlosser et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Tunneling phenomena in carbon nanotube field-effect transistors

(2008) Joachim Knoch et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE