Highly Efficient Experimental Approach to Evaluate Metal to 2D Semiconductor Interfaces in Vertical Diodes with Asymmetric Metal Contacts

Two-dimensional van der Waals spinterfaces and magnetic-interfaces

(2020) Jean-Francois Dayen et al.   Applied Physics Reviews

Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance

(2020) Sung Jin Yang et al.   Nature Communications

Full-color active-matrix organic light-emitting diode display on human skin based on a large-area MoS2 backplane

(2020) Minwoo Choi et al.   Science Advances

Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors

(2020) Na Li et al.   Nature Electronics

Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

(2019) Yan Wang et al.   NATURE

Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides

(2019) Kai Sotthewes et al.   Journal of Physical Chemistry C

Ferromagnet/Two-Dimensional Semiconducting Transition-Metal Dichalcogenide Interface with Perpendicular Magnetic Anisotropy

(2019) Wen Zhang et al.   ACS Nano

Engineering the interface chemistry for scandium electron contacts in WSe2 transistors and diodes

(2019) Christopher M Smyth et al.   2D Materials

2D materials for quantum information science

(2019) Xiaolong Liu et al.   Nature Reviews Materials

Two-Dimensional Material Tunnel Barrier for Josephson Junctions and Superconducting Qubits

(2019) Kan-Heng Lee et al.   NANO LETTERS

Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides

(2019) Tae Young Jeong et al.   Nature Communications

Ohmic contacts between monolayer WSe 2 and two-dimensional titanium carbides

(2018) Qiuhui Li et al.   CARBON

Two-dimensional transition metal dichalcogenides: interface and defect engineering

(2018) Zehua Hu et al.   CHEMICAL SOCIETY REVIEWS

Layer dependent magnetoresistance of vertical MoS2 magnetic tunnel junctions

(2018) Muhammad Farooq Khan et al.   Nanoscale

Impact of Synthesized MoS2 Wafer-Scale Quality on Fermi Level Pinning in Vertical Schottky-Barrier Heterostructures

(2018) Christopher J. Perini et al.   ACS Applied Materials & Interfaces

Ultimate limit in size and performance of WSe2 vertical diodes

(2018) Ghazanfar Nazir et al.   Nature Communications

Environmental Effects on the Electrical Characteristics of Back-Gated WSe2 Field-Effect Transistors

(2018) Francesca Urban et al.   Nanomaterials

Recent development of two-dimensional transition metal dichalcogenides and their applications

(2017) Wonbong Choi et al.   Materials Today

Vertical charge transport through transition metal dichalcogenides – a quantitative analysis

(2017) Yuqi Zhu et al.   Nanoscale

A microprocessor based on a two-dimensional semiconductor

(2017) Stefan Wachter et al.   Nature Communications

High Mobility MoS2Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

(2016) Jingli Wang et al.   ADVANCED MATERIALS

Does p-type ohmic contact exist in WSe2–metal interfaces?

(2016) Yangyang Wang et al.   Nanoscale

Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors

(2015) Wei Liu et al.   ACS Nano

Statistical Study on the Schottky Barrier Reduction of Tunneling Contacts to CVD Synthesized MoS2

(2015) Seunghyun Lee et al.   NANO LETTERS

Electrical contacts to two-dimensional semiconductors

(2015) Adrien Allain et al.   NATURE MATERIALS

Uniformly Wetting Deposition of Co Atoms on MoS2 Monolayer: A Promising Two-Dimensional Robust Half-Metallic Ferromagnet

(2014) Qian Chen et al.   ACS Applied Materials & Interfaces

Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

(2014) Lingming Yang et al.   NANO LETTERS

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors

(2014) Rajesh Kappera et al.   NATURE MATERIALS

Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

(2014) Jiahao Kang et al.   Physical Review X

A Review on Conduction Mechanisms in Dielectric Films

(2014) Fu-Chien Chiu   Advances in Materials Science and Engineering

The physics and chemistry of the Schottky barrier height

(2014)   Applied Physics Reviews

WSe2 field effect transistors with enhanced ambipolar characteristics

(2013) Saptarshi Das et al.   APPLIED PHYSICS LETTERS

Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors

(2013) Wei Liu et al.   NANO LETTERS

Hysteresis in Single-Layer MoS2 Field Effect Transistors

(2012) Dattatray J. Late et al.   ACS Nano

Determination of Work Function of Graphene under a Metal Electrode and Its Role in Contact Resistance

(2012) Seung Min Song et al.   NANO LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Charged-impurity scattering in graphene

(2008) J.-H. Chen et al.   Nature Physics