Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS2 Field Effect Transistors

Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance

(2020) Sung Jin Yang et al.   Nature Communications

Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

(2019) Yan Wang et al.   NATURE

Impact of H‐Doping on n‐Type TMD Channels for Low‐Temperature Band‐Like Transport

(2019) Han Sol Lee et al.   Small

A new metal transfer process for van der Waals contacts to vertical Schottky-junction transition metal dichalcogenide photovoltaics

(2019) Cora M. Went et al.   Science Advances

Contact engineering for 2D materials and devices

(2018) Daniel S. Schulman et al.   CHEMICAL SOCIETY REVIEWS

Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact

(2018) Hyung Gon Shin et al.   NANO LETTERS

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

(2018) Yuan Liu et al.   NATURE

Study of the layer-dependent properties of MoS2 nanosheets with different crystal structures by DFT calculations

(2018) Zong-Yan Zhao et al.   Catalysis Science & Technology

Fully Transparent p-MoTe2 2D Transistors Using Ultrathin MoO x /Pt Contact Media for Indium-Tin-Oxide Source/Drain

(2018) Yongjae Cho et al.   ADVANCED FUNCTIONAL MATERIALS

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS2 Field-Effect Transistors

(2018) Sang-Soo Chee et al.   ADVANCED MATERIALS

High-Performance Wafer-Scale MoS2 Transistors toward Practical Application

(2018) Hu Xu et al.   Small

Argon Plasma Induced Phase Transition in Monolayer MoS2

(2017) Jianqi Zhu et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Atomically Thin Ohmic Edge Contacts Between Two-Dimensional Materials

(2016) Marcos H. D. Guimarães et al.   ACS Nano

Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

(2016) Jian Gao et al.   ADVANCED MATERIALS

Layer specific optical band gap measurement at nanoscale in MoS2 and ReS2 van der Waals compounds by high resolution electron energy loss spectroscopy

(2016) K. Dileep et al.   JOURNAL OF APPLIED PHYSICS

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

(2016) Hsun-Jen Chuang et al.   NANO LETTERS

MoS2 transistors with 1-nanometer gate lengths

(2016) S. B. Desai et al.   SCIENCE

Two- and four-probe field-effect and Hall mobilities in transition metal dichalcogenide field-effect transistors

(2016) Ghazanfar Nazir et al.   RSC Advances

Transition metal dichalcogenide heterojunction PN diode toward ultimate photovoltaic benefits

(2016) Jongtae Ahn et al.   2D Materials

Ohmic Contacts to 2D Semiconductors through van der Waals Bonding

(2016) Mojtaba Farmanbar et al.   Advanced Electronic Materials

Two-dimensional semiconductors for transistors

(2016) Manish Chhowalla et al.   Nature Reviews Materials

Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2

(2015) Naveen Kaushik et al.   ACS Applied Materials & Interfaces

Electrical contacts to two-dimensional semiconductors

(2015) Adrien Allain et al.   NATURE MATERIALS

Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics

(2014) Min Sup Choi et al.   ACS Nano

Intimate contacts

(2014) Debdeep Jena et al.   NATURE MATERIALS

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors

(2014) Rajesh Kappera et al.   NATURE MATERIALS

Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

(2014) Jiahao Kang et al.   Physical Review X

Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2

(2013) N. R. Pradhan et al.   APPLIED PHYSICS LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

(2012) H. Yang et al.   SCIENCE

LiF Layer at the Interface of Au Cathode in Organic Light-Emitting Devices: A Nonchemical Induced Carrier Injection Enhancement

(2011) Zhengyi Sun et al.   Journal of Physical Chemistry C

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS