期刊
ELECTROCHIMICA ACTA
卷 376, 期 -, 页码 -出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2021.138032
关键词
Electroless plating; Chip stacking; Pressure-free bonding; Vertical interconnection; Low-temperature bonding
资金
- National Taiwan University [NTU-CC-109L893401]
- Ministry of Education [109L9006]
- Ministry of Science and Technology of Taiwan [MOST 109-2634-F-002-042]
The study achieved high uniformity microfluidic electroless bonding processes for the vertical interconnection between Cu pillars at very low bonding temperature and without pressure. Different flow patterns were investigated, and the key parameters influencing bonding uniformity were found to be flow rate, stay time, and reverse flow.
The high uniformity microfluidic electroless bonding processes of Nickel (Phosphorus) (Ni(P)), Copper (Cu), and Gold (Au) were achieved for the vertical interconnection between Cu pillars at very low bonding temperature and without pressure. Three flow patterns of electroless bonding system were investigated and applied which includes continuous flow, intermittent flow, and intermittent oscillatory flow. Atomic hydrogen and hydrogen gas bubbles were founded to be the cause of skip-plating and extraneous plating in the microchannel. The important parameters influencing the flow patterns are founded to be flow rate, stay time, and reverse flow and were investigated to deal with the intermediate and by-products so as to achieve a high degree of uniformity in the bonding. Furthermore, the effect of the geometry of Cu pillar on the formation of void and seam within the interconnection was included as well. 0 2021 Elsevier Ltd. All rights reserved.
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