Design and modeling of niobium oxide-tantalum oxide based self-selective memristor for large-scale crossbar memory

标题
Design and modeling of niobium oxide-tantalum oxide based self-selective memristor for large-scale crossbar memory
作者
关键词
Memristor, Threshold switching, TaO, NbO, Self-selector, Resistive random access memory (RRAM)
出版物
CHAOS SOLITONS & FRACTALS
Volume 145, Issue -, Pages 110818
出版商
Elsevier BV
发表日期
2021-03-11
DOI
10.1016/j.chaos.2021.110818

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