标题
Contact Engineering of Vertically Grown ReS2 with Schottky Barrier Modulation
作者
关键词
-
出版物
ACS Applied Materials & Interfaces
Volume 13, Issue 6, Pages 7529-7538
出版商
American Chemical Society (ACS)
发表日期
2021-02-07
DOI
10.1021/acsami.0c20108
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Large Area Vertically Oriented Few-Layer MoS2 for Efficient Thermal Conduction and Optoelectronic Applications
- (2020) Bishnu Pada Majee et al. Journal of Physical Chemistry Letters
- Selective etching in graphene–MoS2 heterostructures for fabricating graphene-contacted MoS2 transistors
- (2020) Zeliang Sun et al. AIP Advances
- Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy
- (2020) Shu’an Xing et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides
- (2019) Kai Sotthewes et al. Journal of Physical Chemistry C
- Chemical Vapor Deposition Growth of Vertical MoS2 Nanosheets on p-GaN Nanorods for Photodetector Application
- (2019) Guofeng Yang et al. ACS Applied Materials & Interfaces
- Synthesis of Wafer-Scale Monolayer WS2 Crystals toward the Application in Integrated Electronic Devices
- (2019) Jiajun Chen et al. ACS Applied Materials & Interfaces
- Nanoassembly Growth Model for Subdomain and Grain Boundary Formation in 1T′ Layered ReS 2
- (2019) Xiaobo Li et al. ADVANCED FUNCTIONAL MATERIALS
- Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS2 Transistors
- (2019) Jisu Jang et al. ACS Applied Materials & Interfaces
- Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States
- (2018) Gwang-Sik Kim et al. ACS Nano
- Theoretical and Experimental Insight into the Mechanism for Spontaneous Vertical Growth of ReS2 Nanosheets
- (2018) Debjit Ghoshal et al. ADVANCED FUNCTIONAL MATERIALS
- Highly Efficient Photocatalytic Hydrogen Evolution by ReS2 via a Two-Electron Catalytic Reaction
- (2018) Qin Zhang et al. ADVANCED MATERIALS
- Contact engineering for 2D materials and devices
- (2018) Daniel S. Schulman et al. CHEMICAL SOCIETY REVIEWS
- Large-Area CVD-Grown Sub-2 V ReS2 Transistors and Logic Gates
- (2017) Ajjiporn Dathbun et al. NANO LETTERS
- Enhanced Performance of MoS2 Photodetectors by Inserting an ALD-Processed TiO2 Interlayer
- (2017) Yusin Pak et al. Small
- Ultrahigh, Ultrafast, and Self-Powered Visible-Near-Infrared Optical Position-Sensitive Detector Based on a CVD-Prepared Vertically Standing Few-Layer MoS2 /Si Heterojunction
- (2017) Ridong Cong et al. Advanced Science
- Type-I van der Waals heterostructure formed by MoS2 and ReS2 monolayers
- (2017) Matthew Z. Bellus et al. Nanoscale Horizons
- Growth and Tunable Surface Wettability of Vertical MoS2 Layers for Improved Hydrogen Evolution Reactions
- (2016) Ganesh R. Bhimanapati et al. ACS Applied Materials & Interfaces
- Large-Area Bilayer ReS2 Film/Multilayer ReS2 Flakes Synthesized by Chemical Vapor Deposition for High Performance Photodetectors
- (2016) Muhammad Hafeez et al. ADVANCED FUNCTIONAL MATERIALS
- High Mobility MoS2Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer
- (2016) Jingli Wang et al. ADVANCED MATERIALS
- Extremely Weak van der Waals Coupling in Vertical ReS2 Nanowalls for High-Current-Density Lithium-Ion Batteries
- (2016) Qin Zhang et al. ADVANCED MATERIALS
- Transition Metal Dichalcogenide Atomic Layers for Lithium Polysulfides Electrocatalysis
- (2016) Ganguli Babu et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Vertically Oriented Arrays of ReS2 Nanosheets for Electrochemical Energy Storage and Electrocatalysis
- (2016) Jian Gao et al. NANO LETTERS
- Controlled growth of large-area anisotropic ReS2atomic layer and its photodetector application
- (2016) Xiaobo Li et al. Nanoscale
- Black Phosphorus N-Type Field-Effect Transistor with Ultrahigh Electron Mobility via Aluminum Adatoms Doping
- (2016) Amit Prakash et al. Small
- Humidity sensing using vertically oriented arrays of ReS2nanosheets deposited on an interdigitated gold electrode
- (2016) Aijun Yang et al. 2D Materials
- Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2
- (2015) Naveen Kaushik et al. ACS Applied Materials & Interfaces
- Interfacial Nondegenerate Doping of MoS2 and Other Two-Dimensional Semiconductors
- (2015) Sanjay Behura et al. ACS Nano
- Single-Layer ReS2: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy
- (2015) Yung-Chang Lin et al. ACS Nano
- Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2)
- (2015) Kunttal Keyshar et al. ADVANCED MATERIALS
- Encapsulated graphene field-effect transistors for air stable operation
- (2015) Konstantinos Alexandrou et al. APPLIED PHYSICS LETTERS
- 2H → 1T phase transition and hydrogen evolution activity of MoS2, MoSe2, WS2 and WSe2 strongly depends on the MX2 composition
- (2015) Adriano Ambrosi et al. CHEMICAL COMMUNICATIONS
- Statistical Study on the Schottky Barrier Reduction of Tunneling Contacts to CVD Synthesized MoS2
- (2015) Seunghyun Lee et al. NANO LETTERS
- A universal etching-free transfer of MoS2 films for applications in photodetectors
- (2015) Donglin Ma et al. Nano Research
- Electrical contacts to two-dimensional semiconductors
- (2015) Adrien Allain et al. NATURE MATERIALS
- Phase patterning for ohmic homojunction contact in MoTe2
- (2015) S. Cho et al. SCIENCE
- Chemical Vapor Deposition of High-Quality and Atomically Layered ReS2
- (2015) Xuexia He et al. Small
- Understanding catalysis in a multiphasic two-dimensional transition metal dichalcogenide
- (2015) Stanley S. Chou et al. Nature Communications
- Growth of Large-Scale and Thickness-Modulated MoS2 Nanosheets
- (2014) Nitin Choudhary et al. ACS Applied Materials & Interfaces
- Schottky barrier heights for Au and Pd contacts to MoS2
- (2014) Naveen Kaushik et al. APPLIED PHYSICS LETTERS
- The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces
- (2014) Cheng Gong et al. NANO LETTERS
- Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution
- (2014) Joonki Suh et al. NANO LETTERS
- Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
- (2014) Rajesh Kappera et al. NATURE MATERIALS
- Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling
- (2014) Sefaattin Tongay et al. Nature Communications
- Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors
- (2014) Jiahao Kang et al. Physical Review X
- Large-Area Synthesis of Highly Crystalline WSe2 Monolayers and Device Applications
- (2013) Jing-Kai Huang et al. ACS Nano
- Origin of Indirect Optical Transitions in Few-Layer MoS2, WS2, and WSe2
- (2013) Weijie Zhao et al. NANO LETTERS
- Control of Schottky Barriers in Single Layer MoS2 Transistors with Ferromagnetic Contacts
- (2013) Jen-Ru Chen et al. NANO LETTERS
- High Performance Multilayer MoS2 Transistors with Scandium Contacts
- (2012) Saptarshi Das et al. NANO LETTERS
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study
- (2012) Wanxiang Feng et al. PHYSICAL REVIEW B
- Impact of fixed charge on metal-insulator-semiconductor barrier height reduction
- (2011) Jenny Hu et al. APPLIED PHYSICS LETTERS
- Emerging Photoluminescence in Monolayer MoS2
- (2010) Andrea Splendiani et al. NANO LETTERS
- Stability of Doped Transparent Carbon Nanotube Electrodes
- (2008) Roderick Jackson et al. ADVANCED FUNCTIONAL MATERIALS
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