150 nm × 200 nm Cross‐Point Hexagonal Boron Nitride‐Based Memristors

Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices

(2019) Wei Wang et al.   Nature Communications

Experimental Observation and Mitigation of Dielectric Screening in Hexagonal Boron Nitride Based Resistive Switching Devices

(2018) Bingru Wang et al.   CRYSTAL RESEARCH AND TECHNOLOGY

Recommended Methods to Study Resistive Switching Devices

(2018) Mario Lanza et al.   Advanced Electronic Materials

Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides

(2017) Ruijing Ge et al.   NANO LETTERS

Toward reliable RRAM performance: macro- and micro-analysis of operation processes

(2017) Gennadi Bersuker et al.   Journal of Computational Electronics

Graphene and Related Materials for Resistive Random Access Memories

(2017) Fei Hui et al.   Advanced Electronic Materials

Resistive Switching in ZnO Nanorods/Graphene Oxide Hybrid Multilayer Structures

(2017) Gopinathan Anoop et al.   Advanced Electronic Materials

Liquid-Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications

(2016) Chunxue Hao et al.   ADVANCED FUNCTIONAL MATERIALS

Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

(2016) Yanfeng Ji et al.   APPLIED PHYSICS LETTERS

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

(2016) Zhongrui Wang et al.   NATURE MATERIALS

A review of emerging non-volatile memory (NVM) technologies and applications

(2016) An Chen   SOLID-STATE ELECTRONICS

Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOxBased Memristive Devices

(2015) Michael Lübben et al.   ADVANCED MATERIALS

Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application

(2015) A. Prakash et al.   APPLIED PHYSICS LETTERS

Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array

(2015) Jeonghwan Song et al.   IEEE ELECTRON DEVICE LETTERS

Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets

(2015) Peifu Cheng et al.   NANO LETTERS

Annealing free, clean graphene transfer using alternative polymer scaffolds

(2015) Joshua D Wood et al.   NANOTECHNOLOGY

Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

(2015) Vinod K. Sangwan et al.   Nature Nanotechnology

Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics

(2015) Jongmyung Yoo et al.   AIP Advances

Resistive switching of Cu/SiC/Au memory devices with a high ON/OFF ratio

(2014) L. Zhong et al.   SOLID-STATE ELECTRONICS

Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

(2014) Yuchao Yang et al.   Nature Communications

Bipolar resistive switching behavior with high ON/OFF ratio of Co:BaTiO3 films by acceptor doping

(2013) S. Li et al.   APPLIED PHYSICS LETTERS

High ON/OFF Ratio and Quantized Conductance in Resistive Switching of ${\rm TiO}_{2}$ on Silicon

(2013) Chengqing Hu et al.   IEEE ELECTRON DEVICE LETTERS

Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix

(2013) Narendar Gogurla et al.   NANOTECHNOLOGY

Observation of Nonvolatile Resistive Memory Switching Characteristics in Ag/Graphene-Oxide/Ag Devices

(2012) Gunasekaran Venugopal et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Large-Scale Synthesis of High-Quality Hexagonal Boron Nitride Nanosheets for Large-Area Graphene Electronics

(2012) Kang Hyuck Lee et al.   NANO LETTERS

Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene

(2012) Jun Yao et al.   Nature Communications

Mechanism of nonvolatile resistive switching in graphene oxide thin films

(2011) Fei Zhuge et al.   CARBON

Nonvolatile resistive switching in single crystalline ZnO nanowires

(2011) Yuchao Yang et al.   Nanoscale

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance

(2010) Chun-Hu Cheng et al.   ADVANCED MATERIALS

Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications

(2010) Hu Young Jeong et al.   NANO LETTERS

Nonvolatile resistive switching in graphene oxide thin films

(2009) C. L. He et al.   APPLIED PHYSICS LETTERS

Forming Process Investigation of $\hbox{Cu}_{x} \hbox{O}$ Memory Films

(2008) H. B. Lv et al.   IEEE ELECTRON DEVICE LETTERS