Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene
出版年份 2012 全文链接
标题
Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene
作者
关键词
-
出版物
Nature Communications
Volume 3, Issue 1, Pages -
出版商
Springer Nature
发表日期
2012-10-02
DOI
10.1038/ncomms2110
参考文献
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