Gate-tunable the interface properties of GaAs–WSe2 (1D–2D) vdWs heterojunction for high-responsivity, self-powered photodetector
出版年份 2021 全文链接
标题
Gate-tunable the interface properties of GaAs–WSe2 (1D–2D) vdWs heterojunction for high-responsivity, self-powered photodetector
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 118, Issue 4, Pages 041102
出版商
AIP Publishing
发表日期
2021-01-26
DOI
10.1063/5.0035275
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