期刊
NANO TODAY
卷 25, 期 -, 页码 122-134出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.nantod.2019.02.011
关键词
2D materials; Field effect transistors; Contact; Dielectric; Surface charge transfer; Intercalation
资金
- National Key Research and Development Program of Ministry of Science and Technology [2018YFB0406603]
- National Natural Science Foundation of China [61811540408, 51872084, 61704051, 61574101, U1632156]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB30000000]
- Natural Science Foundation of Hunan Province [2017RS3021, 2017JJ3033]
Benefiting from the atomically thin body thickness of two-dimensional (2D) materials, field-effect transistors with 2D semiconductor as active channel enables enhanced electrostatic gate coupling for next-generation nanoelectronics. On the other hand, due to the atomic thin body and delicate lattice of 2D material, high-quality interfaces are essential to preserve the superior performance of the transistors, which is recognized as a key challenge within dangling-bond free 2D surface. Herein, we review and highlight recent state-of-the-art advances on interface engineering of high-performance 2D materials transistors, including contact engineering, dielectric engineering, surface charge transfer doping engineering, and intercalation engineering, and outlook the opportunities and challenges for developing 2D materials for low-power, high-performance microelectronics. (C) 2019 Elsevier Ltd. All rights reserved.
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