Article
Chemistry, Physical
Nikhilesh Maity, Pooja Srivastava, Himani Mishra, Ravindra Shinde, Abhishek Kumar Singh
Summary: This study demonstrates the generation of linearly polarized, anisotropic intra- and interlayer excitonic bound states in the transition metal monochalcogenide (TMC) GeSe/SnS van der Waals heterostructure, showing dramatic variation in excitonic energies and optical absorption spectrum under compressive/tensile biaxial strain. The changes in excitonic energies and optical band gap are attributed to the shift in effective dielectric constant and band dispersion upon the application of biaxial strain, showing potential applications in optoelectronics and optical quantum computers.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Chemistry, Multidisciplinary
Wanhan Su, Sen Zhang, Chang Liu, Qianlei Tian, Xingqiang Liu, Kenli Li, Yawei Lv, Lei Liao, Xuming Zou
Summary: This study demonstrates a 2D PVK and ReS2 heterostructure with high sensitivity and broad spectral response. The strong interlayer coupling and large type-II band offsets contribute to the improved performance of the heterostructure, making it a promising candidate for self-driven photodetectors.
Article
Chemistry, Multidisciplinary
Shaochun Zhang, Mina Maruyama, Susumu Okada, Mengsong Xue, Kenji Watanabe, Takashi Taniguchi, Kazuki Hashimoto, Yasumitsu Miyata, Ruben Canton-Vitoria, Ryo Kitaura
Summary: This study reports the observation of the photovoltaic effect in a WS2/MoS2 van der Waals heterostructure. Light excitation of WS2/MoS2 at a wavelength of 633 nm leads to a photocurrent without applying bias voltages.
Article
Nanoscience & Nanotechnology
Leihao Feng, Xi Zhang, Quan Zheng, Ya Nie, Gang Xiang
Summary: The structural and electronic properties of a two-dimensional SiAs2/GeAs2 van der Waals heterostructure and its applications have been investigated by first-principles calculations and Silvaco Atlas simulations. The stable heterostructure exhibits an indirect bandgap of 0.99 eV in type II band alignment, making it suitable for light detection and energy harvesting. By applying an appropriate electric field, it can exhibit a direct bandgap up to 0.66 eV. The results show that the band alignment of the heterostructure can be tuned between type II and type I for various applications.
Article
Chemistry, Analytical
Seyedali Hosseini, Azam Iraji Zad, Seyed Mohammad Mahdavi, Ali Esfandiar
Summary: A tunable gain SnS2/InSe Van der Waals heterostructure photodetector was studied, utilizing the favorable properties of two-dimensional materials such as SnS2 and InSe. The device showed high photoresponsivity and detectivity, making it a potential candidate for commercial visible image sensors.
Article
Nanoscience & Nanotechnology
Zhiying Dan, Baoxiang Yang, Qiqi Song, Jianru Chen, Hengyi Li, Wei Gao, Le Huang, Menglong Zhang, Mengmeng Yang, Zhaoqiang Zheng, Nengjie Huo, Lixiang Han, Jingbo Li
Summary: In recent years, the development of 2D nonlayered Bi2O2Se-based electronics and optoelectronics has attracted great attention due to their high electron mobility, stability, and narrow band gaps. However, conventional Bi2O2Se-based photodetectors suffer from issues such as high dark current, slow response speed, and persistent photoconductivity effect, limiting their applications in fast-response imaging sensors and low-power broadband detection. In this study, a Bi2O2Se/2H-MoTe2 van der Waals heterostructure is reported, which shows improved performance in terms of responsivity, detectivity, and conversion efficiency. The proposed heterostructure is considered a promising candidate for integrated circuits, image sensors, and low-power detection.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Nanoscience & Nanotechnology
Po-Liang Chen, Yueyang Chen, Tian-Yun Chang, Wei-Qing Li, Jia-Xin Li, Seokhyeong Lee, Zhuoran Fang, Mo Li, Arka Majumdar, Chang-Hua Liu
Summary: The extension of the operation wavelength of silicon photonics to the mid-infrared band is of great importance for fields such as health care, astronomy, and chemical sensing. However, a major challenge for mid-IR silicon photonics has been the lack of high-speed, high-responsivity, and low noise-equivalent power photodetectors. In this study, researchers demonstrated a van der Waals heterostructure mid-IR photodetector integrated on a silicon-on-insulator waveguide, which exhibited high responsivity and stable switching performance.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Nanoscience & Nanotechnology
Guanghui Wang, Bin Han, Chun Hong Mak, Jialong Liu, Bo Liu, Peng Liu, Xiaodong Hao, Hongyue Wang, Shufang Ma, Bingshe Xu, Hsien-Yi Hsu
Summary: This study demonstrates a photodetector with a mixed-dimensional van der Waals heterostructure of hBN/Gr/1D CH3NH3PbI3, which shows improved carrier extraction, excellent responsivity, and specific detectivity. The device also exhibits high stability when exposed to air due to the atomic encapsulation of hBN.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Nanoscience & Nanotechnology
Tian-Yun Chang, Po-Liang Chen, Pei-Sin Chen, Wei-Qing Li, Jia-Xin Li, Ming-Yuan He, Jen-Te Chao, Ching-Hwa Ho, Chang-Hua Liu
Summary: This study demonstrates the potential of using band-engineered van der Waals hetero-structures as bias-selectable photodetectors. By tuning the bias polarity, the spectral photoresponse can be switched between different bands, showing high external quantum efficiency and fast operation speed.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Yurong Jiang, Ruiqi Wang, Xueping Li, Zinan Ma, Lin Li, Jian Su, Yong Yan, Xiaohui Song, Congxin Xia
Summary: This study demonstrates an efficient method to optimize the photoelectric performance of vdWH by introducing the photovoltaic field effect. The proposed photodiode based on double vdWHs shows a high responsivity of 715 mA.W-1 and fast response time of 45 mu s, indicating excellent self-powered ability.
Article
Multidisciplinary Sciences
Long Zhang, Fengcheng Wu, Shaocong Hou, Zhe Zhang, Yu-Hsun Chou, Kenji Watanabe, Takashi Taniguchi, Stephen R. Forrest, Hui Deng
Summary: Controlling matter-light interactions with cavities is crucial in modern science and technology. By integrating MoSe2-WS2 heterobilayers in a microcavity, cooperative coupling between moire-lattice excitons and microcavity photons has been established, providing versatile control of both matter and light. This moire polariton system combines strong nonlinearity and microscopic-scale tuning of matter excitations, offering a platform to study collective phenomena from tunable arrays of quantum emitters.
Article
Chemistry, Physical
Jinping Chen, Zhen Zhang, Yi Ma, Jiying Feng, Xiaoyu Xie, Xiaoxuan Wang, Aoqun Jian, Yuanzheng Li, Zhuxin Li, Heng Guo, Yizhi Zhu, Qiannan Cui, Zengliang Shi, Chunxiang Xu
Summary: A WS2/InSe van der Waals heterostructure (vdWH) photodiode was fabricated by stacking InSe and WS2 flakes using an all-dry transfer method. The heterostructure exhibited excellent photovoltaic behavior with a large open voltage, short-circuit current, fast response time, high light on/off ratio, high responsivity, and broadband photoresponse. This study provides a strategy for developing high-performance self-powered broadband photodetectors based on 2D materials.
Article
Chemistry, Physical
Jinping Chen, Zhen Zhang, Yi Ma, Jiying Feng, Xiaoyu Xie, Xiaoxuan Wang, Aoqun Jian, Yuanzheng Li, Zhuxin Li, Heng Guo, Yizhi Zhu, Qiannan Cui, Zengliang Shi, Chunxiang Xu
Summary: This study presents a WS2/InSe vdWH photodiode based on 2D materials, which exhibits excellent photovoltaic behavior and broadband photoresponse due to the precise stacking and energy-band alignment.
Article
Chemistry, Physical
Bi Luo, Peng Wu, Jiafeng Zhang, Liang Cao, Chunhui Wang, Bin Lu, Bao Zhang, Xing Ou
Summary: A two-dimensional space confined strategy is proposed to construct van der Waals heterostructures for superior potassium-ion battery (PIB) anodes. The synergistic effects in the 2D heterostructure greatly enhance electron transportation and ions diffusion, while inhibiting polysulfide dissolution for increased structural durability. As a result, the synthesized C/MoS2/G anode demonstrates remarkable K-storage performance with high reversible capacity, excellent rate capability, and superior long-cycling stability.
Article
Chemistry, Multidisciplinary
Jingrun Ran, Hongping Zhang, Jiangtao Qu, Jieqiong Shan, Kenneth Davey, Julie M. Cairney, Liqiang Jing, Shi-Zhang Qiao
Summary: This study introduces a ReS2/In2ZnS4 2D/2D van der Waals heterostructure with highly promoted photocatalytic H-2-evolution rate, making it one of the most efficient In2ZnS4-based photocatalysts. Advanced characterizations and theoretical computations demonstrate that the interlayer electronic interaction and atomic-level S active centers within the structure collaboratively boost light-induced H-2 evolution.
Article
Physics, Multidisciplinary
Xiao-Bo He, Hua-Tian Hu, Ji-Bo Tang, Guo-Zhen Zhang, Xue Chen, Jun-Jun Shi, Zhen-Wei Ou, Zhi-Feng Shi, Shun-Ping Zhang, Chang Liu, Hong-Xing Xu
Summary: In this work, a multilayer insulator grown by atomic layer deposition is used as the tunnel barrier in fabricating LEIT devices. The microfabrication techniques ensure stable performance of the LEIT device under ambient conditions, allowing for uniform electroluminescence.
Article
Chemistry, Multidisciplinary
Junjun Shi, Xiaobo He, Wen Chen, Yang Li, Meng Kang, Yangjian Cai, Hongxing Xu
Summary: A dual cavity resonance scheme with remote excitation is developed to significantly enhance SHG in a nanobelt system. The enhancement is achieved through the cooperation of plasmonic and FP cavity modes.
Article
Nanoscience & Nanotechnology
Xiaobo He, Huatian Hu, Zhenyu Yang, Yangjian Cai, Wenqiang Wang, Zhanghua Han, Junjun Shi, Hongxing Xu
Summary: This article presents a method for the separated photodetection of multiple-wavelength surface plasmon polaritons (SPPs) using wavelength-dependent beam splitting technology. By utilizing a plasmonic crystal splitter and MSM photodetectors, independent electrical detection of SPPs with different wavelengths can be achieved.
Article
Engineering, Electrical & Electronic
Xinpei Duan, Zhenyu Yang, Jun Lin, Hao Huang, Guoli Li, Da Wan, Xuming Zou, Jingwei Bai, Jinshui Miao, Lei Liao, Xingqiang Liu
Summary: Tailoring MoS2 into nanoribbon shape allows efficient regulation of electrical properties and fabrication of high-performance transistors. The quasi-3D channel geometry enhances gate modulation capability and improves device electrical performance. The constructed logic gates based on this structure demonstrate robust logic circuits.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Physics, Applied
Yajie Ren, Danna Zhang, Yanan Ding, Guoxia Liu, Fukai Shan
Summary: This study investigates the effect of oxygen plasma treatment (OPT) on the electrical performance of SnO (x) thin film transistors (TFTs), and finds that OPT can significantly reduce oxygen vacancies in the thin films and improve their electrical performance. Furthermore, integrating SnO (x) TFTs with high-k Al2O3 dielectric further enhances their electrical performance.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Physics, Applied
Yanan Ding, Yajie Ren, Danna Zhang, Guoxia Liu, Fukai Shan
Summary: In this study, a self-passivated field effect transistor based on oxide nanofibers was achieved through thermal treatment, water treatment, and deep ultraviolet irradiation. The electrical performance of the transistor was initially degraded after water treatment, but recovered after deep ultraviolet irradiation. When integrated with a high-k ZrO2 dielectric, the self-passivated transistor exhibited further improved electrical performance.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Yanan Ding, Yajie Ren, Guoxia Liu, Fukai Shan
Summary: The introduction of a passivation layer is an effective strategy to enhance the electrical stability of thin-film transistors (TFTs). However, conventional passivation processes often damage the bottom semiconductor layer. In this study, UV-irradiated ZrO2 was used as a passivation layer for In2O3 TFTs, resulting in improved electrical performance and excellent stability. This research demonstrates the great potential of ZrO2 passivation for transparent electronics fabrication.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Materials Science, Ceramics
Chengzhe Han, Junjie Wang, Guoxia Liu, Fukai Shan
Summary: Thin-film transistors (TFTs) with bilayer channels were used to improve the field-effect mobility and bias stress stability. By optimizing the structure, the electrical performance of the TFTs was greatly improved, which is an important step towards achieving transparent, high-performance, and low-temperature metal oxide TFTs.
JOURNAL OF ASIAN CERAMIC SOCIETIES
(2022)
Review
Chemistry, Multidisciplinary
Dandan Hao, Zhenyu Yang, Jia Huang, Fukai Shan
Summary: Massive data processing with high efficiency and low power consumption is needed for the development of artificial intelligence and information technology. The current computing systems with separated memory and processor consume a large amount of energy and have a slow running speed during massive data processing. To address this issue, the brain-inspired neuromorphic computing system has been developed, which provides hardware support for emulating biological synaptic functions and achieving highly intensive data processing with low power consumption. The optoelectronic synaptic device (OSD), as a neuromorphic device, is considered an ideal replacement for the von Neumann-based computer due to its ultrafast signal transmission, large bandwidth, low energy consumption, and wireless communication. Metal halide perovskites (MHPs), with their unique optoelectronic properties, have gained increasing attention as effective photosensitive materials in OSDs. This review introduces the recent progress on MHPs-based OSDs (MHPs-OSDs), including the structures and properties of MHPs, and the architectures and performance characteristics of MHPs-OSDs. The applications of MHPs-OSDs are also presented. Finally, the outlook and opportunities of MHPs-OSDs are discussed.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Physics, Applied
Tongzheng Li, Tongying Xu, Zhengyang Yao, Yanan Ding, Guoxia Liu, Fukai Shan
Summary: In this study, a thin-film transistor (TFT) biosensor based on an indium gallium zinc oxide (IGZO) thin film fabricated by the sol-gel method was proposed for the early detection of Parkinson's disease (PD). The biosensor exhibited high sensitivity and selectivity for a major biomarker of PD, a-Syn, with a sensitivity of 189.9 mV dec(-1) and a coefficient of determination R-2 of 99.7% between 10 pg ml(-1) and 100 ng ml(-1).
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Bowen Yan, Yanan Ding, Tongzheng Li, Haiyang Qiu, Yepeng Shi, Guoxia Liu, Fukai Shan
Summary: This article demonstrates a high-performance thin film transistor (TFT) based on a double-stack fluorine-doped In2O3/In2O3(InFO/InO) homojunction channel. By utilizing the unique bandgap characteristic of fluorine dopant, the TFT exhibits improved electrical performance, including a field-effect mobility (mu(FE)) of 5.69 cm(2)/Vs and a high ON/OFF current (I-on/I-off) ratio of 10(8). X-ray photoelectron spectroscopy (XPS) analysis confirms the significance of the InFO film as the front channel. Furthermore, integration with the Al2O3 dielectric enhances the TFT's electrical performance, resulting in a large mu(FE) of 31.49 cm(2)/Vs, high I-on/I-off (approximately 10(8)), and a small threshold voltage of 1.4 V. These findings highlight the great potential of the TFT based on InFO/InO homojunction channel in low-power, flexible, and printable electronic devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Physics, Applied
Chengjie Zhou, Wencheng Niu, Lei Li, Dandan Hao, Hao Huang, Houqiang Fu, Xingqiang Liu, Xuming Zou, Fukai Shan, Zhenyu Yang
Summary: In this study, a multifunctional optoelectronic memory was developed by coupling Au nanoparticles with MoS2, enhancing the light absorption capacity of MoS2 and achieving excellent device performance and storage time. Based on this research, a hardware core mimicking human retinal imaging was proposed to enable advances in neuromorphic electronics, particularly in optical information sensing and learning.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Zifan Wang, Yepeng Shi, Zihan Zhang, Yao Dong, Guoxia Liu, Fukai Shan
Summary: This study fabricates thin film transistors based on metal oxide using a solution process to regulate the channel. The concentration of oxygen vacancies in the front and back channel can be controlled by adsorbing oxygen ions using hafnium, resulting in improved field effect mobility and device stability. Additionally, a transparent TFT with a field effect mobility of 20.64 cm(2)/Vs is demonstrated using a ZrO2 dielectric.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Chemistry, Physical
Qinwei An, Wenqi Xiong, Feng Hu, Yikang Yu, Pengfei Lv, Siqi Hu, Xuetao Gan, Xiaobo He, Jianlin Zhao, Shengjun Yuan
Summary: We have successfully grown high-quality WS2 and WSe2 nanotubes on Si substrates using catalytic chemical vapour deposition with Au nanoparticles. The Au nanoparticles act as nucleation sites for the growth of WS2 or WSe2 shells, which subsequently seed the growth of nanotubes. We find that the growth mode of nanotubes is sensitive to temperature and have achieved around 79% WS2 nanotubes with single chiral angles, primarily at 30 degrees (approximately 37%) and 0 degrees (approximately 12%). Furthermore, we demonstrate the tunability of geometric, electronic, and optical properties of WS2 nanotubes through their chirality.
Article
Materials Science, Ceramics
Yanan Ding, Yajie Ren, Zifan Wang, Haiyang Qiu, Fukai Shan, Guoxia Liu
Summary: Relative humidity has a significant impact on the electrical performance of thin film transistors, particularly on threshold voltage and mobility. The humidity effect on electrical performance is mainly attributed to the donor effect from absorbed water molecules. Additionally, relative humidity also plays a significant role in the electrical stability of thin film transistors.
JOURNAL OF ASIAN CERAMIC SOCIETIES
(2022)
