Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes
出版年份 2020 全文链接
标题
Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes
作者
关键词
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出版物
Advanced Science
Volume -, Issue -, Pages 2000917
出版商
Wiley
发表日期
2020-09-28
DOI
10.1002/advs.202000917
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Graphene-Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non-Polar Sapphire Substrates for Green Light Emitting Diodes
- (2020) Fang Liu et al. ADVANCED FUNCTIONAL MATERIALS
- Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates
- (2020) Shubhra S. Pasayat et al. APPLIED PHYSICS LETTERS
- Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene
- (2019) Zhaolong Chen et al. ADVANCED MATERIALS
- Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper
- (2019) Li Wang et al. NATURE
- Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications
- (2019) Jiadong Yu et al. ADVANCED MATERIALS
- High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer
- (2018) Zhaolong Chen et al. ADVANCED MATERIALS
- The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes
- (2018) Shengjun Zhou et al. Scientific Reports
- Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire
- (2018) Yue Qi et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Exfoliation of AlN film using two-dimensional multilayer hexagonal BN for deep-ultraviolet light-emitting diodes
- (2018) Qingqing Wu et al. Applied Physics Express
- Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
- (2017) Sergio Fernández-Garrido et al. NANO LETTERS
- Valley Pseudospin with a Widely Tunable Bandgap in Doped Honeycomb BN Monolayer
- (2017) Zhigang Song et al. NANO LETTERS
- AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics
- (2017) David Arto Laleyan et al. NANO LETTERS
- Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil
- (2017) Xiaozhi Xu et al. Science Bulletin
- Fluorinated h-BN as a magnetic semiconductor
- (2017) Sruthi Radhakrishnan et al. Science Advances
- Enhanced Luminescence Performance of Quantum Wells by Coupling Piezo-Phototronic with Plasmonic Effects
- (2016) Xin Huang et al. ACS Nano
- Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN
- (2016) Taha Ayari et al. APPLIED PHYSICS LETTERS
- Epitaxy of GaN Nanowires on Graphene
- (2016) Vishnuvarthan Kumaresan et al. NANO LETTERS
- ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity
- (2016) Yanghua Lu et al. NANOTECHNOLOGY
- Effect of V-pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN-based green light-emitting diodes
- (2016) Shengjun Zhou et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations
- (2016) Matthias Auf der Maur et al. PHYSICAL REVIEW LETTERS
- Boron Nitride Quantum Dots with Solvent-Regulated Blue/Green Photoluminescence and Electrochemiluminescent Behavior for Versatile Applications
- (2016) Mengli Liu et al. Advanced Optical Materials
- Piezoelectric effect on compensation of the quantum-confined Stark effect in InGaN/GaN multiple quantum wells based green light-emitting diodes
- (2016) Sheng-Chieh Tsai et al. Nano Energy
- Nanoscale Electrostructural Characterization of Compositionally Graded AlxGa1–xN Heterostructures on GaN/Sapphire (0001) Substrate
- (2015) Andrian V. Kuchuk et al. ACS Applied Materials & Interfaces
- Edge-Hydroxylated Boron Nitride Nanosheets as an Effective Additive to Improve the Thermal Response of Hydrogels
- (2015) Feng Xiao et al. ADVANCED MATERIALS
- Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization ofp-type GaN by Mg doping followed by low-energy electron beam irradiation
- (2015) Hiroshi Amano REVIEWS OF MODERN PHYSICS
- Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes
- (2015) Shuji Nakamura REVIEWS OF MODERN PHYSICS
- Direct growth of etch pit-free GaN crystals on few-layer graphene
- (2015) Seung Jin Chae et al. RSC Advances
- 2D materials via liquid exfoliation: a review on fabrication and applications
- (2015) Chengxue Huo et al. Science Bulletin
- Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer
- (2014) Yazeed Alaskar et al. ADVANCED FUNCTIONAL MATERIALS
- Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN
- (2014) Masanobu Hiroki et al. APPLIED PHYSICS LETTERS
- A review of GaN-based optoelectronic devices on silicon substrate
- (2014) Baijun Zhang et al. CHINESE SCIENCE BULLETIN
- Stress-induced piezoelectric field in GaN-based 450-nm light-emitting diodes
- (2014) Wael Z. Tawfik et al. JOURNAL OF APPLIED PHYSICS
- Large-scale synthesis and functionalization of hexagonal boron nitride nanosheets
- (2014) Ganesh R. Bhimanapati et al. Nanoscale
- Hexagonal boron nitride for deep ultraviolet photonic devices
- (2014) H X Jiang et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Large Scale Thermal Exfoliation and Functionalization of Boron Nitride
- (2014) Zhenhua Cui et al. Small
- Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
- (2014) Jeehwan Kim et al. Nature Communications
- Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers
- (2013) Priti Gupta et al. APPLIED PHYSICS LETTERS
- Epitaxial GaN Microdisk Lasers Grown on Graphene Microdots
- (2013) Hyeonjun Baek et al. NANO LETTERS
- An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes
- (2012) Jiaxing Wang et al. JOURNAL OF APPLIED PHYSICS
- Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
- (2012) Yasuyuki Kobayashi et al. NATURE
- Oxidation of a two-dimensional hexagonal boron nitride monolayer: a first-principles study
- (2012) Yu Zhao et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- High-quality GaN films grown on chemical vapor-deposited graphene films
- (2012) Kunook Chung et al. NPG Asia Materials
- Microstructures of GaN Thin Films Grown on Graphene Layers
- (2011) Hyobin Yoo et al. ADVANCED MATERIALS
- Flexible Inorganic Nanostructure Light-Emitting Diodes Fabricated on Graphene Films
- (2011) Chul-Ho Lee et al. ADVANCED MATERIALS
- Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices
- (2010) Kunook Chung et al. SCIENCE
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