Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers
出版年份 2013 全文链接
标题
Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 103, Issue 18, Pages 181108
出版商
AIP Publishing
发表日期
2013-10-31
DOI
10.1063/1.4827539
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Epitaxial Growth of III–Nitride/Graphene Heterostructures for Electronic Devices
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