The Effect of Surface Polarity on the CMP Behavior of 6H-SiC Substrates

Oxidation of cefazolin by potassium permanganate: Transformation products and plausible pathways

(2016) Liping Li et al.   CHEMOSPHERE

Performance of colloidal silica and ceria based slurries on CMP of Si-face 6H-SiC substrates

(2015) Guomei Chen et al.   APPLIED SURFACE SCIENCE

XPS surface chemical characterization of atmospheric particles of different sizes

(2015) Maria R. Guascito et al.   ATMOSPHERIC ENVIRONMENT

Chemical mechanical planarization (CMP) of on-axis Si-face SiC wafer using catalyst nanoparticles in slurry

(2014) Yan Zhou et al.   SURFACE & COATINGS TECHNOLOGY

Effects of Atmosphere and Ultraviolet Light Irradiation on Chemical Mechanical Polishing Characteristics of SiC Wafers

(2012) Osamu Ohnishi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface

(2011) K. Yamamura et al.   CIRP ANNALS-MANUFACTURING TECHNOLOGY

Research on Reaction Method of High Removal Rate Chemical Mechanical Polishing Slurry for 4H-SiC Substrate

(2011) Hiroshi Nitta et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Hybrid polishing mechanism of single crystal SiC using mixed abrasive slurry (MAS)

(2010) H.S. Lee et al.   CIRP ANNALS-MANUFACTURING TECHNOLOGY