Defect Structure Determination of GaN Films in GaN/AlN/Si Heterostructures by HR-TEM, XRD, and Slow Positrons Experiments

Liquid metals: fundamentals and applications in chemistry

(2018) T. Daeneke et al.   CHEMICAL SOCIETY REVIEWS

Trapping phenomena and degradation mechanisms in GaN-based power HEMTs

(2018) Matteo Meneghini et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

(2018) Fabrizio Roccaforte et al.   MICROELECTRONIC ENGINEERING

Wafer-Sized Ultrathin Gallium and Indium Nitride Nanosheets through the Ammonolysis of Liquid Metal Derived Oxides

(2018) Nitu Syed et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Comparative study of threading dislocations in GaN epitaxial layers by nondestructive methods

(2017) Cosmin Romanitan et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Doping of III-nitride materials

(2017) Pietro Pampili et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals

(2017) Benjamin J. Carey et al.   Nature Communications

GaN Technology for Power Electronic Applications: A Review

(2016) Tyler J. Flack et al.   JOURNAL OF ELECTRONIC MATERIALS

III-V compound semiconductors: Growth and structures

(2016) Thomas F. Kuech   PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS

Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

(2016) Yu-Lin Tsai et al.   PROGRESS IN QUANTUM ELECTRONICS

Positrons in surface physics

(2016) Christoph Hugenschmidt   SURFACE SCIENCE REPORTS

Defect identification in semiconductors with positron annihilation: Experiment and theory

(2013) Filip Tuomisto et al.   REVIEWS OF MODERN PHYSICS

Defect characterization in Mg-doped GaN studied using a monoenergetic positron beam

(2012) A. Uedono et al.   JOURNAL OF APPLIED PHYSICS

Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy

(2012) José M. Mánuel et al.   JOURNAL OF CRYSTAL GROWTH

NIH Image to ImageJ: 25 years of image analysis

(2012) Caroline A Schneider et al.   NATURE METHODS

Positrons as interface-sensitive probes of polar semiconductor heterostructures

(2010) I. Makkonen et al.   PHYSICAL REVIEW B

GaN–a new material for positron moderation

(2008) L.V. Jørgensen et al.   APPLIED SURFACE SCIENCE