Investigation of resistive switching and transport mechanisms of Al2O3/TiO2−x memristors under cryogenic conditions (1.5 K)

Conduction mechanisms of TaN/HfOx/Ni memristors

(2019) Vitalii Voronkovskii et al.   Materials Research Express

Low-temperature coexistence of memory and threshold switchings in Pt/TiOx/Pt crossbar arrays

(2019) H. S. Alagoz et al.   APPLIED PHYSICS LETTERS

The electronic interface for quantum processors

(2019) J.P.G. van Dijk et al.   MICROPROCESSORS AND MICROSYSTEMS

Nanoscale resistive switching memory devices: a review

(2019) Stefan Slesazeck et al.   NANOTECHNOLOGY

Multilevel HfO2-based RRAM devices for low-power neuromorphic networks

(2019) V. Milo et al.   APL Materials

Cryo-CMOS Circuits and Systems for Quantum Computing Applications

(2018) Bishnu Patra et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration

(2018) P. Galy et al.   IEEE Journal of the Electron Devices Society

Review of memristor devices in neuromorphic computing: materials sciences and device challenges

(2018) Yibo Li et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

A programmable two-qubit quantum processor in silicon

(2018) T. F. Watson et al.   NATURE

Fabrication of Planar Back End of Line Compatible HfO$_x$ Complementary Resistive Switches

(2017) Marina Labalette et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Study From Cryogenic to High Temperatures of the High- and Low-Resistance-State Currents of ReRAM Ni–HfO2–Si Capacitors

(2016) Cesar Vaca et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

(2016) Daniele Ielmini   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Resistive memory variability: A simplified trap-assisted tunneling model

(2016) Daniele Garbin et al.   SOLID-STATE ELECTRONICS

Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application

(2015) A. Prakash et al.   APPLIED PHYSICS LETTERS

Low-Temperature Characteristics of HfOx-Based Resistive Random Access Memory

(2015) Runchen Fang et al.   IEEE ELECTRON DEVICE LETTERS

Bipolar resistive switching from liquid helium to room temperature

(2015) S Blonkowski et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

A two-qubit logic gate in silicon

(2015) M. Veldhorst et al.   NATURE

Resistive switching phenomena: A review of statistical physics approaches

(2015) Jae Sung Lee et al.   Applied Physics Reviews

Cryogenic Control Architecture for Large-Scale Quantum Computing

(2015) J. M. Hornibrook et al.   Physical Review Applied

Metallic to hopping conduction transition in Ta2O5−x/TaOy resistive switching device

(2014) Ye Zhang et al.   APPLIED PHYSICS LETTERS

Role of oxygen vacancies in TiO2-based resistive switches

(2013) Tingkun Gu   JOURNAL OF APPLIED PHYSICS

Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors

(2012) Dmitri B. Strukov et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

First principles modeling of charged oxygen vacancy filaments in reduced TiO 2 –implications to the operation of non-volatile memory devices

(2012) Liang Zhao et al.   MATHEMATICAL AND COMPUTER MODELLING

High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm

(2012) Fabien Alibart et al.   NANOTECHNOLOGY

Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal-Oxide-Metal System

(2011) Matthew D. Pickett et al.   ADVANCED MATERIALS

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

(2011) D Ielmini et al.   NANOTECHNOLOGY

Direct Identification of the Conducting Channels in a Functioning Memristive Device

(2010) John Paul Strachan et al.   ADVANCED MATERIALS

Deep versus Shallow Behavior of Intrinsic Defects in Rutile and Anatase TiO2 Polymorphs

(2010) Giuseppe Mattioli et al.   Journal of Physical Chemistry C

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Resistive-Memory Embedded Unified RAM (R-URAM)

(2009) Sungho Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ab initiostudy of the electronic states induced by oxygen vacancies in rutile and anataseTiO2

(2008) G. Mattioli et al.   PHYSICAL REVIEW B