标题
Molecular beam epitaxial growth of scandium nitride on hexagonal SiC, GaN, and AlN
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 115, Issue 17, Pages 172101
出版商
AIP Publishing
发表日期
2019-10-22
DOI
10.1063/1.5121329
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- AlScN: A III-V semiconductor based ferroelectric
- (2019) Simon Fichtner et al. JOURNAL OF APPLIED PHYSICS
- The new nitrides: layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system
- (2019) Debdeep Jena et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Point Defects and p -Type Doping in ScN from First Principles
- (2018) Yu Kumagai et al. Physical Review Applied
- Electronic transport in degenerate (100) scandium nitride thin films on magnesium oxide substrates
- (2018) John S. Cetnar et al. APPLIED PHYSICS LETTERS
- Effect of impurities on morphology, growth mode, and thermoelectric properties of (1 1 1) and (0 0 1) epitaxial-like ScN films
- (2018) Arnaud le Febvrier et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Epitaxial ScAlN Etch-Stop Layers Grown by Molecular Beam Epitaxy for Selective Etching of AlN and GaN
- (2017) Matthew T. Hardy et al. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
- Heteroepitaxial growth and electric properties of (110)-oriented scandium nitride films
- (2017) Takeshi Ohgaki et al. JOURNAL OF CRYSTAL GROWTH
- Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon
- (2015) L. Lupina et al. APPLIED PHYSICS LETTERS
- Optical and transport measurement and first-principles determination of the ScN band gap
- (2015) Ruopeng Deng et al. PHYSICAL REVIEW B
- Hydride vapor phase epitaxy and characterization of high-quality ScN epilayers
- (2014) Yuichi Oshima et al. JOURNAL OF APPLIED PHYSICS
- Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces
- (2014) Sean W. King et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- TiN/(Al,Sc)N metal/dielectric superlattices and multilayers as hyperbolic metamaterials in the visible spectral range
- (2014) Bivas Saha et al. PHYSICAL REVIEW B
- ScGaN and ScAlN: emerging nitride materials
- (2014) M. A. Moram et al. Journal of Materials Chemistry A
- Electrical properties of scandium nitride epitaxial films grown on (100) magnesium oxide substrates by molecular beam epitaxy
- (2013) Takeshi Ohgaki et al. JOURNAL OF APPLIED PHYSICS
- Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides
- (2013) Siyuan Zhang et al. JOURNAL OF APPLIED PHYSICS
- Epitaxial (111) films of Cu, Ni, and CuxNiy on α−Al2O3 (0001) for graphene growth by chemical vapor deposition
- (2012) David L. Miller et al. JOURNAL OF APPLIED PHYSICS
- Anomalously high thermoelectric power factor in epitaxial ScN thin films
- (2011) Sit Kerdsongpanya et al. APPLIED PHYSICS LETTERS
- Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films
- (2009) Morito Akiyama et al. APPLIED PHYSICS LETTERS
- High mobility single crystalline ScN and single-orientation epitaxial YN on sapphire via magnetron sputtering
- (2008) John M. Gregoire et al. JOURNAL OF APPLIED PHYSICS
- HVPE of scandium nitride on 6H–SiC(0001)
- (2008) J.H. Edgar et al. JOURNAL OF CRYSTAL GROWTH
- Growth of epitaxial thin films of scandium nitride on 100-oriented silicon
- (2008) M.A. Moram et al. JOURNAL OF CRYSTAL GROWTH
- Very low dislocation density, resistive GaN films obtained using transition metal nitride interlayers
- (2008) M. A. Moram et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search