Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides

Bandgap in Al1−xScxN

(2013) Ruopeng Deng et al.   APPLIED PHYSICS LETTERS

Microstructure and dielectric properties of piezoelectric magnetron sputtered w-ScxAl1−xN thin films

(2012) Agne Zukauskaite et al.   JOURNAL OF APPLIED PHYSICS

First-principles study of spontaneous polarization and band gap bowing in ScxAlyGa1 −x−yN alloys lattice-matched to GaN

(2012) Kazuhiro Shimada et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Nonlinear variations in the electronic structure of II–VI and III–V wurtzite semiconductors with biaxial strain

(2011) Shenyuan Yang et al.   APPLIED PHYSICS LETTERS

Built-in field control in alloyedc-plane III-N quantum dots and wells

(2011) M. A. Caro et al.   JOURNAL OF APPLIED PHYSICS

Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN

(2011) Poul Georg Moses et al.   JOURNAL OF CHEMICAL PHYSICS

Growth, microstructure and morphology of epitaxial ScGaN films

(2011) S. M. Knoll et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Influence of Zr on structure, mechanical and thermal properties of Ti–Al–N

(2011) Li Chen et al.   THIN SOLID FILMS

Limitations to band gap tuning in nitride semiconductor alloys

(2010) I. Gorczyca et al.   APPLIED PHYSICS LETTERS

Microstructural origins of localization in InGaN quantum wells

(2010) R A Oliver et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Origin of the Anomalous Piezoelectric Response in WurtziteScxAl1−xNAlloys

(2010) Ferenc Tasnádi et al.   PHYSICAL REVIEW LETTERS

Advances in group III-nitride-based deep UV light-emitting diode technology

(2010) M Kneissl et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy

(2009) M. A. Moram et al.   JOURNAL OF APPLIED PHYSICS

Accurate Band Gaps of Semiconductors and Insulators with a Semilocal Exchange-Correlation Potential

(2009) Fabien Tran et al.   PHYSICAL REVIEW LETTERS

X-ray diffraction of III-nitrides

(2009) M A Moram et al.   REPORTS ON PROGRESS IN PHYSICS

The charge neutrality level and the fermi level pinning in A3N (BN, AlN, GaN, InN) nitrides

(2009) V. N. Brudnyi et al.   Russian Physics Journal

Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering

(2008) Morito Akiyama et al.   ADVANCED MATERIALS

Low-temperature growth of ferroelectric lead zirconate titanate thin films using the magnetic field of low power 2.45GHz microwave irradiation

(2008) Z. J. Wang et al.   APPLIED PHYSICS LETTERS

Giant piezoelectric d[sub 33] coefficient in ferroelectric vanadium doped ZnO films

(2008) Y. C. Yang et al.   APPLIED PHYSICS LETTERS

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics

The effect of oxygen incorporation in sputtered scandium nitride films

(2008) M.A. Moram et al.   THIN SOLID FILMS