☆ 4.4 Article

Growth of epitaxial thin films of scandium nitride on 100-oriented silicon

JOURNAL OF CRYSTAL GROWTH (2008)

期刊

JOURNAL OF CRYSTAL GROWTH

卷 310, 期 11, 页码 2746-2750

出版社

ELSEVIER

DOI: 10.1016/j.jcrysgro.2008.01.045

关键词

molecular beam epitaxy; nitrides; semiconducting III-V materials; semiconducting silicon; scandium nitride

类别

Crystallography Materials Science, Multidisciplinary Physics, Applied

资金

EPSRC [EP/F018614/1, EP/F019076/1, EP/E035167/1] Funding Source: UKRI
Engineering and Physical Sciences Research Council [EP/F019076/1, EP/F018614/1, EP/E035167/1] Funding Source: researchfish

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摘要

A series of 100-oriented ScN films was grown under N-rich conditions on 100-oriented Si using different Sc fluxes. The ScN films grew in an epitaxial cube-on-cube orientation, with [0 0 1](ScN)//[0 0 1](Si) and [1 0 0](ScN)//[1 0 0](Si), despite the high (11%) lattice mismatch between ScN and Si. The film grain size increases and the film omega-FWHM decreases with increasing Sc flux, but the film roughness increases. Films grown under similar conditions on 111-oriented Si resulted in mixed 111 and 100 orientations, indicating that the 100 orientation is favoured both due to texture inheritance from the substrate and due to the growth conditions used. (C) 2008 Elsevier B.V. All rights reserved.

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Effect of growth temperature of NH3-MBE grown GaN-on-Si layers on donor concentration and leakage currents

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Summary: The effect of growth temperature on the buffer leakage currents of GaN-on-Si layers was investigated. It was found that higher growth temperature results in lower leakage currents. The defects in GaN layers grown at different temperatures were studied using photoluminescence technique, and a correlation between leakage currents, structural perfection, and donor concentration in GaN-on-Si layers was established. It was also observed that reduced growth temperature leads to the formation of inversion domains.

JOURNAL OF CRYSTAL GROWTH (2024)

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Article Crystallography

Numerical study of continuous Czochralski (CCz) silicon single crystal growth in a double-side heater

Thi-Hoai-Thu Nguyen, Jyh-Chen Chen

Summary: The effect of heater power control on heat, flow, and oxygen transport for CCz crystal growth was studied. Shorter upper side heater design could improve crystal quality and growth, but with higher power consumption.

JOURNAL OF CRYSTAL GROWTH (2024)

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Article Crystallography

Contributions to the development of crystal growth technologies

Peter Rudolph

Summary: This article presents an overview of selected contributions to the development of crystal growth technology by the Laudise Prize awardee 2023. It discusses various aspects such as shaped crystal growth, the correlation between melt structure and crystal quality, control of intrinsic defects and inclusions, prevention of dislocation cell patterns, and melt growth experiments under a travelling magnetic field.

JOURNAL OF CRYSTAL GROWTH (2024)

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