期刊
2D MATERIALS
卷 8, 期 2, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/2053-1583/abd288
关键词
VOCl; insulator 2D materials; metal– insulator-metal device; dielectric constant; van der Waals heterostructures
资金
- National Key R&D Program of China [2017YFA0303500, 2020YFA0405800]
- NSFC [U1932201, 21978278]
- NSFC-MAECI [51861135202]
- CAS International Partnership Program [211134KYSB20190063]
- CAS Collaborative Innovation Program of Hefei Science Center [2019HSC-CIP002]
- CAS Key Research Program of Frontier Sciences [QYZDB-SSW-SLH018]
- CAS Interdisciplinary Innovation Team
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Nankai University (111 project) [B12015]
- CSC fellowship
The VOCl single crystal has a high dielectric constant of up to 11.7, making it suitable as a gate dielectric layer in MoSe2 FETs to ensure gate capacitance and low leakage current. The MoSe2 FET with VOCl dielectric shows a significant decrease in subthreshold swing and a low trap density at the interface, highlighting the high potential of VOCl as a two-dimensional gate dielectric.
Field-effect transistors (FETs) based on van der Waals heterostructures without the traditional lattice mismatch constraints are highly promising for electronics. As the devices' scale decreases, it is crucial to find a dielectric layer with a high dielectric constant to ensure gate capacitance and low leakage current. Herein, a layered insulator VOCl single crystal synthesized by chemical vapor transport is demonstrated as a high-performance gate dielectric. Notably, the dielectric constant of VOCl can reach up to 11.7, estimated through measuring the capacitance of the metal-insulator-metal device. The MoSe2 FET with VOCl dielectric exhibits a significant decrease in the subthreshold swing from 4906 to 169 mV dec(-1), indicating a low trap density at the interface of MoSe2/VOCl. Besides, the threshold voltage (V-th) of bottom-gated MoSe2 FET is as low as 0.2 V, further confirming the high potential of VOCl as an ideal two-dimensional gate dielectric.
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