Review
Chemistry, Multidisciplinary
Xianyue Zhao, Stephan Menzel, Ilia Polian, Heidemarie Schmidt, Nan Du
Summary: This review comprehensively examines the state-of-the-art research on resistive switching (RS) in BiFeO3 (BFO)-based memristive devices. It discusses the fabrication techniques for preparing functional BFO layers, analyzes the lattice systems and crystal types responsible for RS behaviors, and reviews the underlying physical mechanisms and effects influencing RS in BFO-based memristive devices. Furthermore, the review explores the applications of BFO devices, evaluates energy consumption in RS, and discusses potential optimization techniques for memristive devices.
Article
Materials Science, Multidisciplinary
Yanfeng Yin, Chaoyang Kang, Caihong Jia, Weifeng Zhang
Summary: Coexistence of nonvolatile unipolar and volatile threshold resistive switching is observed in Pt/LaMnO3(LMO)/Pt structures. Nonvolatile switching is achieved with negative bias, while volatile switching is obtained with positive bias. Voltage polarity can control the type of resistance switching, which is significant for in-memory computing technology applications.
CURRENT APPLIED PHYSICS
(2021)
Article
Materials Science, Multidisciplinary
Lilan Zou, Jianmei Shao, Dinghua Bao
Summary: The study showed that the bilayer Pt/TiO2/Co3O4/Pt device exhibited enhanced resistive switching performance. Analysis indicated that Schottky emission and Ohmic mechanisms were responsible for the switching states. Insertion of a Co3O4 layer improved the switching properties of TiO2-based resistive random access memory (RRAM).
MATERIALS RESEARCH EXPRESS
(2021)
Article
Physics, Applied
Jiacheng Li, Chuangye Yao, Yifu Ke, Wenhua Huang, Santhosh Kumar Thatikonda, Ni Qin, Dinghua Bao
Summary: In this study, spinel ferrite NiFe2O4 films were prepared using pulsed laser deposition, and Pt/NiFe2O4/Pt devices with the coexistence of unipolar and bipolar resistive switching were fabricated. The devices exhibited stable and nonvolatile resistive switching properties under different modes. Analysis showed that the carrier transport mechanisms differed significantly between the two modes. A physical model combining oxygen ion migration and electric field distribution was proposed to explain the coexistence of these distinct mechanisms in the RRAM device.
APPLIED PHYSICS LETTERS
(2022)
Article
Physics, Multidisciplinary
Ying Yang, Yuelin Zhang, Liang Yang, Jingdi Lu, Gongxun Deng, Yinshu Wang, Hui Zhu, Aiji Wang
Summary: This study demonstrates the three-state resistive switching (RS) phenomenon on a Pt/BiFeO3/SrRuO3 structure. The three-state storage capability is attributed to the movement of oxygen vacancies and the trapping/detrapping of charge carriers at the interface. Additionally, a ternary OR logic gate is designed using only one memristor.
Article
Chemistry, Physical
M. Asif, Ashok Kumar
Summary: The resistive random memory effect has been investigated in Pt/CaZrO3/Pt/Si thin-film device, demonstrating bipolar and unipolar resistive switching phenomena. The device exhibits good retention time and low compliance current in both BRS and URS, making it suitable for nonvolatile memories.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Physics, Applied
Lifu Liu, Shijie Cheng, Wei Chen, Shuxia Ren, Xin Kang, Xu Zhao
Summary: MoS2-polymer-based memory devices have attracted attention due to their mechanical flexibility, convenient solution processability, and affordability. They exhibit unipolar resistive switching behavior and have low operating voltage, large ON/OFF ratio, and multilevel cell storage ability. The presence of 1T-phase MoS2 is crucial for this resistive switching behavior, which can be utilized for the development of high-performance, high-density data storage designs.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Materials Science, Multidisciplinary
Yajun Fu, Wei Tang, Jin Wang, Linhong Cao
Summary: The effect of BFO thickness on the write-once-read-many (WORM) resistive switching behavior of Pt/BFO/LNO-based devices is investigated. The study shows that all the devices exhibit high ON/OFF ratio, long-term data retention, and reliable endurance. The set voltages of the devices have an approximately linear relation to the BFO thickness.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2023)
Article
Materials Science, Ceramics
Yibo Deng, Xiaoguang Xu, Zedong Xu, Mengxi Wang, Qi Liu, Yingli Ma, Jikun Chen, Kangkang Meng, Yong Wu, Jun Miao, Yong Jiang
Summary: In this work, the resistive switching behavior of an amorphous La2Ti2O7 film sandwiched between two Pt electrodes is reported. The resistive switching is forming-free and highly uniform. The mechanism of switching behavior is attributed to trapping/detrapping-mediated electronic bipolar resistance switching.
CERAMICS INTERNATIONAL
(2022)
Article
Engineering, Electrical & Electronic
Zhenhua Wu, Yinxiao Feng, Yan Liu, Huilie Shi, Shuai Zhang, Zekun Liu, Zhiyu Hu
Summary: A bipolar resistive switching behavior was observed in the Ag/Sb2Te3/Pt heterojunction, with numerical simulation clarifying the electrical conduction mechanism and proposing a synergy model of the conductive filament and Schottky emission. This work enriches the material system of resistive random access memory and promotes a profound understanding of the physical mechanism behind RS behavior for further application in synaptic bionics.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Dongsheng Cui, Yawei Du, Zhenhua Lin, Mengyang Kang, Yifei Wang, Jie Su, Jincheng Zhang, Yue Hao, Jingjing Chang
Summary: A memory device with an Ag/Ga2O3/Pt structure has been successfully fabricated, exhibiting both bipolar resistive switching (BRS) and unipolar resistive switching (URS) behaviors. It was found that the bipolar and unipolar modes can be set by applying a positive voltage with the same compliance current (I-cc) of 1 mA. The reset process involves a polarity change of sweeping voltages without I-cc to switch between the bipolar and unipolar modes. The conduction mechanisms are identified as conducting filaments (CFs) for the low resistance state (LRS), and schottky emission for BRS, and space charge limited conduction mechanism for URS in the high resistance states (HRS), respectively.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Materials Science, Ceramics
Rui Su, Yuwei Zhao, Ruizi Xiao, Awei Dong, Zhengze Yuan, Weiming Cheng, Rui Yang, Junbing Yan, Yongchao Wang, Mingxing Gong, Xiangshui Miao
Summary: This study systematically discusses the effect of La doping on the resistive switching properties of BiFeO3 (BFO). La doping can inhibit the volatilization of Bi, diminish the intrinsic oxygen vacancy of BFO, and improve the lattice symmetry of BFO. The resistances of BFO devices with different La doping concentrations show significant differences, and the 15 at. % La-doping BFO device exhibits ultra-low operation voltage and good cycling consistency. The multiple effects of La doping on the resistive characteristics of BFO provide a reference for the application of BFO in the field of resistive memories.
CERAMICS INTERNATIONAL
(2023)
Article
Nanoscience & Nanotechnology
Dongfang Chen, Xiaojun Tan, Bowen Shen, Jun Jiang
Summary: By carefully selecting an electrode that can suppress the interfacial barrier modulation induced by polarization reversal, the conductivity of charged domain walls (CDWs) in thin films can be accurately measured. This is important for the development of high-density ferro-resistive memory.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Physics, Applied
Rui Su, Min Cheng, Awei Dong, Yuwei Zhao, Weiming Cheng, Rui Yang, Junbing Yan, Xiangshui Miao
Summary: Interface-type devices, unlike conductive filament (CF)-type devices, demonstrate continuous conductance changes and have the potential to be used as artificial synapses. This paper investigates Mn-doped BiFeO3 (BFMO) devices with different bottom electrodes and reveals their diverse resistance-switching behaviors. By fabricating a hetero-junction device with a Nb-doped SrTiO3 (NSTO) bottom electrode, the polarity of operation is reversed, leading to barrier transition-dominated conductive behavior in the BFMO-based memristor. The device exhibits various desirable characteristics such as a high ON/OFF ratio, favorable stability, multi-value characteristics, and synaptic plasticity.
APPLIED PHYSICS LETTERS
(2022)
Article
Materials Science, Ceramics
Lixin Zhang, Bin Xie, Wei Chen, Lining Fan, Hui Zheng, Qiong Wu, Peng Zheng, Liang Zheng, Yang Zhang
Summary: In this study, Pt/Ni0.5Zn0.5Fe2O4/Pt (Pt/NZFO/Pt) sandwich structure material with different NZFO film thicknesses were synthesized on an Al2O3 substrate using the pulsed laser deposition method. The resistive switching characteristics of the Pt/NZFO/Pt composite films were investigated, and it was found that they exhibited excellent resistive switching behavior with adjustable set/reset voltage, large memory window, and good retention. The resistive switching mechanism was attributed to the formation and rupture of conducting path by oxygen vacancies. The thickness of the NZFO film could regulate the resistive switching behavior to meet different potential applications.
CERAMICS INTERNATIONAL
(2023)
Review
Immunology
Yogesh Sharma, Adesh K. Saini, Sheetal Kashyap, Gourav Chandan, Narinder Kaur, Vijai Kumar Gupta, Vijay Kumar Thakur, Vipin Saini, Reena V. Saini
Summary: miRNAs play crucial roles in regulating cellular activities and immune responses. Nanotechnology has been utilized to improve the stability and cellular uptake of miRNAs, paving the way for potential therapeutic applications in various diseases.
IMMUNOLOGIC RESEARCH
(2022)
Article
Biochemistry & Molecular Biology
Surbhi Kumawat, Yogesh Sharma, Sanskriti Vats, Sreeja Sudhakaran, Shivani Sharma, Rushil Mandlik, Gaurav Raturi, Virender Kumar, Nitika Rana, Amit Kumar, Humira Sonah, Rupesh Deshmukh
Summary: In this study, 15 SWEET genes were identified in the pomegranate genome, and their structure, classification, and expression dynamics were analyzed. The results suggest that SWEET genes are predominantly expressed in pomegranate peel and may exhibit differential expression under high salinity stress.
MOLECULAR BIOLOGY REPORTS
(2022)
Article
Multidisciplinary Sciences
Chetan Kumar Dotaniya, Brij Lal Lakaria, Yogesh Sharma, Bharat Prakash Meena, Satish Bhagwatrao Aher, Abhay Omprakash Shirale, Priya Gurav Pandurang, Mohan Lal Dotaniya, Ashis Kumar Biswas, Ashok Kumar Patra, Shish Ram Yadav, Madan Lal Reager, Ramesh Chandra Sanwal, Rajesh Kumar Doutaniya, Manju Lata
Summary: This study investigated the performance of chickpea crop under different nutrient management modules in a Vertisol. The results showed that integrated nutrient management modules had a positive impact on crop performance and productivity, as well as soil health. Among the various modules tested, the application of specific doses of organic and inorganic fertilizers to maize and chickpea showed the highest productivity and nutrient uptake in chickpea.
Article
Chemistry, Multidisciplinary
Sandra Rodriguez-Villanueva, Frank Mendoza, Alvaro A. Instan, Ram S. Katiyar, Brad R. Weiner, Gerardo Morell
Summary: This study reports the direct synthesis of graphene on SiO2/Si using hot-filament chemical vapor deposition. The results show the growth of few-layers of graphene over the entire SiO2/Si substrate, far beyond the catalytic copper-strip.
Article
Biochemistry & Molecular Biology
Yogesh Sharma, Alexandra Popescu, Chris Horwood, Paul Hakendorf, Campbell Thompson
Summary: This study found an association between vitamin C deficiency and cognitive impairment in older hospitalised patients. The analysis showed that lower levels of vitamin C were significantly related to lower cognitive function, suggesting that vitamin C deficiency may increase the risk of cognitive impairment.
Article
Chemistry, Physical
Abhinav Tandon, Shalu Rani, Yogesh Sharma
Summary: Researchers have developed a novel binder-free magnesium manganese oxide nanofiber for lithium-ion batteries, which exhibits excellent electrochemical performance, high energy density, and good cyclic stability.
ACS APPLIED ENERGY MATERIALS
(2022)
Article
Environmental Sciences
Abelardo Colon, Javier Avalos, Brad R. Weiner, Gerardo Morell, Rafael Rios
Summary: Filtration technology is crucial for reducing waterborne diseases caused by poor water quality. Nanomaterials can address the challenges of filtration technology by modifying membrane properties. This study explores the use of nanodiamond particles with surface functionality and bio-compatibility for filtration treatments.
JOURNAL OF WATER AND HEALTH
(2023)
Article
Biochemistry & Molecular Biology
Mohan K. Bhattarai, Moses D. Ashie, Sita Dugu, Kiran Subedi, Bishnu P. Bastakoti, Gerardo Morell, Ram S. Katiyar
Summary: Iron oxide nanoparticles (IONPs) were successfully synthesized via a block copolymer-assisted hydrothermal method, and their phase purity and crystal structure were analyzed by X-ray diffraction. The study revealed that the synthesized IONPs exhibited hexagonal phase symmetry of alpha-Fe2O3. Raman analysis and magnetic measurements further confirmed the characteristic features and superparamagnetic behavior of the nanoparticles. Additionally, the study demonstrated the effective adsorption of Congo red (CR) by IONPs, making them potential candidates for wastewater treatment and catalytic applications.
Article
Nanoscience & Nanotechnology
Rajesh K. K. Katiyar, Claudia C. Zuluaga C. Gomez, Swati Katiyar, Balram Tripathi, Gerardo Morell, Brad R. R. Weiner, Ram S. Katiyar
Summary: In this manuscript, the role of ferroelectric nanoparticles (FNPs) coated separators in capacity retention at high current density on S/SWCNT composite cathodes is reported. FNPs coated separators showed a capacity retention improvement of more than 100%, while commercial separator polypropylene (PP) had a retention rate of 72%. The FNPs coated separator acted as a repulsive charge on the separator surface to retard polysulfide migration and protected the surface of lithium from dendrite formation, resulting in higher capacity retention and stability.
Article
Chemistry, Multidisciplinary
Claudia C. Zuluaga-Gomez, Christian O. Plaza-Rivera, Balram Tripathi, Rajesh K. Katiyar, Dhiren K. Pradhan, Gerardo Morell, Yi Lin, Margarita Correa, Ram S. Katiyar
Summary: A composite cathode material of sulfur/ferroelectric nanoparticles/holey graphene (S/FNPs/hG) was fabricated to address the limitations of capacity fading in high-mass-loading Li-S batteries. The unique structure of holey graphene enables fast electron and ion transport within the electrode while mitigating volume expansion. Additionally, the ferroelectric polarization induced by FNPs effectively reduces the shuttling effect. The S/FNPs/hG composite cathodes exhibit sustainable high specific capacity, reliable cycle performance, and superior rate capability for potential commercial applications.
Article
Electrochemistry
Claudia C. C. Zuluaga-Gomez, Balram Tripathi, Christian O. O. Plaza-Rivera, Rajesh K. K. Katiyar, Margarita Correa, Dhiren K. K. Pradhan, Gerardo Morell, Ram S. S. Katiyar
Summary: This study investigates the impact of incorporating ferroelectric nanoparticles into the cathodes of lithium-sulfur batteries. The results show that the inclusion of ferroelectric nanoparticles can reduce the formation of polysulfides and improve the cycling response and stability of the batteries, leading to high performance.
Article
Chemistry, Physical
Flavia P. N. Inbanathan, Katherine Leslee A. Cimatu, David C. C. Ingram, Uriel Joseph Erasquin, Kiran Dasari, Muhammad Shehzad Sultan, Muhammad Sajjad, Vladimir Makarov, Brad R. R. Weiner, Gerardo Morell, Payman Sharifi Abdar, Wojciech M. M. Jadwisienczak
Summary: This study demonstrates the room-temperature paramagnetism in graphene quantum dots doped with nitrogen up to 3.26%. The synthesized nitrogen-doped graphene quantum dots were carefully characterized for their morphology, optical properties, and magnetic behavior using various techniques. The results show a hexagonal crystalline structure and the presence of pyridinic nitrogen configuration, which exhibits paramagnetic behavior at room temperature with a magnetization of 20.8 emu/g.
Proceedings Paper
Computer Science, Hardware & Architecture
Animesh Baranawal, Yogesh Simmhan
Summary: This study introduces optimization methods for ICM, which significantly improve algorithm runtime by reducing overheads such as message communication and time-warp shuffling.
PROCEEDINGS OF THE SEVENTEENTH EUROPEAN CONFERENCE ON COMPUTER SYSTEMS (EUROSYS '22)
(2022)
