期刊
NANOTECHNOLOGY
卷 26, 期 45, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/26/45/455203
关键词
WSe2; n-doping; hydrazine treatment; metal work function; hysteresis
资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [2013R1A2A2A01069023]
- National Research Foundation of Korea [2013R1A2A2A01069023] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report a facile and highly effective n-doping method using hydrazine solution to realize enhanced electron conduction in a WSe2 field-effect transistor (FET) with three different metal contacts of varying work functions-namely, Ti, Co, and Pt. Before hydrazine treatment, the Ti- and Co-contacted WSe2 FETs show weak ambipolar behaviour with electron dominant transport, whereas in the Pt-contacted WSe2 FETs, the p-type unipolar behaviour was observed with the transport dominated by holes. In the hydrazine treatment, a p-type WSe2 FET (Pt contacted) was converted to n-type with enhanced electron conduction, whereas highly n-doped properties were achieved for both Ti- and Co-contacted WSe2 FETs with on-current increasing by three orders of magnitude for Ti. All n-doped WSe2 FETs exhibited enhanced hysteresis in their transfer characteristics, which opens up the possibility of developing memories using transition metal dichalcogenides.
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