Extremely Large Gate Modulation in Vertical Graphene/WSe2Heterojunction Barristor Based on a Novel Transport Mechanism

标题
Extremely Large Gate Modulation in Vertical Graphene/WSe2Heterojunction Barristor Based on a Novel Transport Mechanism
作者
关键词
-
出版物
ADVANCED MATERIALS
Volume 28, Issue 26, Pages 5293-5299
出版商
Wiley
发表日期
2016-05-10
DOI
10.1002/adma.201506004

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