Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface
出版年份 2015 全文链接
标题
Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 107, Issue 2, Pages 023109
出版商
AIP Publishing
发表日期
2015-07-18
DOI
10.1063/1.4926973
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Influence of the density of states of graphene on the transport properties of graphene/MoS2/metal vertical field-effect transistors
- (2015) Rai Moriya et al. APPLIED PHYSICS LETTERS
- Modulation of Schottky barrier height in graphene/MoS2/metal vertical heterostructure with large current ON–OFF ratio
- (2015) Yohta Sata et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures
- (2014) Rai Moriya et al. APPLIED PHYSICS LETTERS
- Tunneling transport in a few monolayer-thick WS2/graphene heterojunction
- (2014) Takehiro Yamaguchi et al. APPLIED PHYSICS LETTERS
- Ideal Graphene/Silicon Schottky Junction Diodes
- (2014) Dhiraj Sinha et al. NANO LETTERS
- Two-dimensional flexible nanoelectronics
- (2014) Deji Akinwande et al. Nature Communications
- Spin–orbit proximity effect in graphene
- (2014) A. Avsar et al. Nature Communications
- Band offsets and heterostructures of two-dimensional semiconductors
- (2013) Jun Kang et al. APPLIED PHYSICS LETTERS
- Van der Waals heterostructures
- (2013) A. K. Geim et al. NATURE
- Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials
- (2013) Woo Jong Yu et al. Nature Nanotechnology
- Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films
- (2013) L. Britnell et al. SCIENCE
- Electrical control of neutral and charged excitons in a monolayer semiconductor
- (2013) Jason S. Ross et al. Nature Communications
- Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2
- (2012) Sefaattin Tongay et al. NANO LETTERS
- Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters
- (2012) Woo Jong Yu et al. NATURE MATERIALS
- Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics
- (2012) Thanasis Georgiou et al. Nature Nanotechnology
- Tunable dielectric response of transition metals dichalcogenides MX2 (M=Mo, W; X=S, Se, Te): Effect of quantum confinement
- (2012) Ashok Kumar et al. PHYSICA B-CONDENSED MATTER
- Effects of strain on band structure and effective masses in MoS2
- (2012) H. Peelaers et al. PHYSICAL REVIEW B
- Boron nitride substrates for high-quality graphene electronics
- (2010) C. R. Dean et al. Nature Nanotechnology
- Electronic Transport in Dual-Gated Bilayer Graphene at Large Displacement Fields
- (2010) Thiti Taychatanapat et al. PHYSICAL REVIEW LETTERS
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now