4.7 Article

Self-assembly of reduced Au atoms for vertical interconnections in three dimensional integrated circuits

期刊

SCRIPTA MATERIALIA
卷 159, 期 -, 页码 119-122

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2018.09.026

关键词

Bonding; Interconnections; Electroless plating

资金

  1. Ministry of Education of Taiwan [107L9006]
  2. Ministry of Science and Technology of Taiwan [107-3017-F-002-001, 107-2622-E-002-004-CC2]
  3. National Taiwan University, Taiwan [NTU-CC-107L892401]
  4. Featured Areas Research Center Program within Higher Education Sprout Project of Taiwan

向作者/读者索取更多资源

Self-assembled Au atoms were employed to bond vertical interconnection for chip-stacking applications without pressure and at a temperature of 50 degrees C. In this process, Au ions in an electroless plating solution are forced through a thin gap between Si chips. The Au atoms, reduced from Au ions, self-assemble between pairs of Cu pillars, and void-free connections are achieved with high joint strength. In addition, it has been shown that the Au grains grow epitaxially with the Cu grains. This epitaxial growth offers a potential method to align the Au grains to enhance electrical performance for future high frequency applications. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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