期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 7, 页码 982-984出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2196673
关键词
AlGaN back barrier; breakdown voltage (BV); gate dielectric; high-voltage device; InAlN/GaN high-electron mobility transistor (HEMT)
资金
- Department of Energy GIGA program
- MARCO MSD program
- Defense Advanced Research Projects Agency MPC program
This letter reports the fabrication of InAlN/GaN high-electron mobility transistors (HEMTs) with a three-terminal OFF-state breakdown voltage (BV) of 3000 V and a low specific on-resistance of 4.25 m Omega . cm(2). To reduce the drain-to-source leakage current in these devices, an AlGaN back barrier has been used. The gate leakage current in these devices is in the similar to 10(-10) A/mm range owing to the use of a SiO2 gate dielectric. This current level is more than six orders of magnitude lower than in Schottky-barrier HEMTs. The combination of an AlGaN back barrier, the high charge sheet density of InAlN/GaN HEMTs, and the low leakage due to the gate-dielectric layer allows for a figure-of-merit BV2/R-ON,R- (SP) of similar to 2.1 x 10(9) V-2 . Omega(-1) . cm(-2).
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