Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

标题
Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 92, Issue 3, Pages 032907
出版商
AIP Publishing
发表日期
2008-01-26
DOI
10.1063/1.2838294

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