Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface

(2012) Sheikh Rahaman et al.   Nanoscale Research Letters

Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films

(2012) Fu-Chien Chiu et al.   Nanoscale Research Letters

Effect of non-lattice oxygen on ZrO2-based resistive switching memory

(2012) Chun-Chieh Lin et al.   Nanoscale Research Letters

Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots

(2012) Writam Banerjee et al.   Nanoscale Research Letters

Improvement of resistive switching characteristics in ZrO2film by embedding a thin TiOxlayer

(2011) Yingtao Li et al.   NANOTECHNOLOGY

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells

(2011) Xianwen Sun et al.   Nanoscale Research Letters

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Study on Resistance Switching Properties of Na0.5Bi0.5TiO3 Thin Films Using Impedance Spectroscopy

(2009) Ting Zhang et al.   Nanoscale Research Letters