Effect of electric field concentration using nanopeak structures on the current–voltage characteristics of resistive switching memory

Highly Improved Uniformity in the Resistive Switching Parameters of TiO2Thin Films by Inserting Ru Nanodots

(2013) Jung Ho Yoon et al.   ADVANCED MATERIALS

Recent Advances and Future Prospects in Functional-Oxide Nanoelectronics: The Emerging Materials and Novel Functionalities that are Accelerating Semiconductor Device Research and Development

(2013) Hiroyuki Akinaga   JAPANESE JOURNAL OF APPLIED PHYSICS

The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy

(2013) Yuanmin Du et al.   AIP Advances

Effects of electrode material and configuration on the characteristics of planar resistive switching devices

(2013) H. Y. Peng et al.   APL Materials

Guided filament formation in NiO-resistive random access memory by embedding gold nanoparticles

(2012) Mutsunori Uenuma et al.   APPLIED PHYSICS LETTERS

Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory

(2010) Jaehoon Song et al.   Applied Physics Express

Formation and disruption of current paths of anodic porous alumina films by conducting atomic force microscopy

(2010) K. Oyoshi et al.   APPLIED SURFACE SCIENCE

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions

(2009) Qi Liu et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching in aluminum/anodized aluminum film structure without forming process

(2009) W. Zhu et al.   JOURNAL OF APPLIED PHYSICS

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Resistive switching of aluminum oxide for flexible memory

(2008) Sungho Kim et al.   APPLIED PHYSICS LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today