A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures

Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures

(2016) T. J. Badcock et al.   APPLIED PHYSICS LETTERS

Stokes shift in semi-polar ( 112¯2) InGaN/GaN multiple quantum wells

(2016) Y. Zhang et al.   APPLIED PHYSICS LETTERS

The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells

(2016) P. Dawson et al.   JOURNAL OF APPLIED PHYSICS

Study of Low-Efficiency Droop in Semipolar ( $20\bar{2}\bar{1}$ ) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence

(2016) Houqiang Fu et al.   Journal of Display Technology

Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect

(2016) Houqiang Fu et al.   AIP Advances

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

(2015) Thi Huong Ngo et al.   APPLIED PHYSICS LETTERS

Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells

(2015) Stefan Schulz et al.   PHYSICAL REVIEW B

High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop

(2013) M. J. Davies et al.   APPLIED PHYSICS LETTERS

Numerical analysis of indirect Auger transitions in InGaN

(2012) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes

(2012) Jiaxing Wang et al.   JOURNAL OF APPLIED PHYSICS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

A numerical study of Auger recombination in bulk InGaN

(2010) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization

(2010) Jiaxing Wang et al.   APPLIED PHYSICS LETTERS

Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells

(2010) Wang Lai et al.   Chinese Physics B

Study on internal quantum efficiency of blue InGaN multiple-quantum-well with an InGaN underneath layer

(2010) JiaXing Wang et al.   Science China-Technological Sciences

Auger recombination rates in nitrides from first principles

(2009) Kris T. Delaney et al.   APPLIED PHYSICS LETTERS

Rate equation analysis of efficiency droop in InGaN light-emitting diodes

(2009) Han-Youl Ryu et al.   APPLIED PHYSICS LETTERS

Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

(2009) Q. Dai et al.   APPLIED PHYSICS LETTERS