Article
Physics, Applied
Reiji Okada, Hiroto Isomura, Yoshiki J. Sato, Ryuji Okazaki, Masayuki Inoue, Shinya Yoshioka
Summary: Researchers have fabricated transparent low-layered crystals of a misfit thermoelectric oxide, which exhibite high transparency and low electrical resistivity due to their single-crystalline structure. These materials have a higher figure of merit compared to previous reports and may serve as a unique class of multi-functional transparent thermoelectric oxides.
APPLIED PHYSICS LETTERS
(2023)
Article
Nanoscience & Nanotechnology
Ki Seok Kim, Min Seong Kim, Jusung Chung, Dongwoo Kim, I. Sak Lee, Hyun Jae Kim
Summary: We present a transparent and flexible polyimide (PI)-doped single-layer (PSL) phototransistor for visible light detection. By co-sputtering amorphous indium-gallium-zinc oxide (IGZO) and PI targets, the PSL is deposited on a SiO2 gate insulator, serving as both a channel layer and a visible-light absorption layer. The PI doping leads to improved optoelectronic characteristics, including higher photoresponsivity, photosensitivity, and specific detectivity, attributed to the induced subgap states. A flexible PSL phototransistor is also fabricated, demonstrating stable optoelectronic characteristics even after 10,000 bending tests.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Review
Materials Science, Multidisciplinary
Joe Willis, David O. Scanlon
Summary: Transparent conducting materials are essential in modern opto-electronic devices, offering a combination of optical transparency and electronic conductivity. The market for transparent electronics is projected to grow rapidly, with a focus on developing high-performance p-type TCMs.
JOURNAL OF MATERIALS CHEMISTRY C
(2021)
Article
Materials Science, Multidisciplinary
Pablo Darnige, Yohann Thimont, Lionel Presmanes, Antoine Barnabe
Summary: In this study, the thermal stability of gamma-CuI thin films was investigated. Post deposition annealing at different temperatures under argon and air atmospheres was conducted to stabilize and optimize the optoelectronic and thermoelectric performances of the material. The experiments revealed that annealing under argon at 300 ? followed by air at 150 ? achieved the best electrical conductivity and p-type degenerative semiconductor behavior of the gamma-CuI thin films. A new coefficient of performance for transparent thermoelectric materials (COPTTE) was proposed and calculated to be 8.3 x 10(-12) A(2) m(-1) K-2 at room temperature for the stabilized gamma-CuI thin film.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Nanoscience & Nanotechnology
Shuang Yang, Qian Li, Chao Li, Tianlong Cao, Tieqiang Wang, Fuqiang Fan, Xuemin Zhang, Yu Fu
Summary: By inserting high-conductive metallic core into p-type metal oxide semiconductor (MOS), the conduction model can be manipulated to enhance sensor response significantly, leading to improved hydrogen gas detection performance.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Materials Science, Multidisciplinary
Chrysa Aivalioti, Emmanouil G. Manidakis, Nikolaos T. Pelekanos, Maria Androulidaki, Katerina Tsagaraki, Zacharias Viskadourakis, Emmanuel Spanakis, Elias Aperathitis
Summary: Niobium-doped nickel oxide (NiO:Nb) thin films were investigated as p-type layer for all oxide transparent solar cells. The films were grown by sputtering on room-temperature substrates in a plasma containing 50% Ar and 50% O2 gases. The doping of Nb increased the hole concentration while maintaining similar optical properties as the undoped film. Thermal treatment improved the optical properties of the films. The transparent NiO:Nb films have potential applications in various optoelectronic devices.
Article
Chemistry, Physical
Kyunghan Ahn, Ga Hye Kim, Se-Jun Kim, Jihyun Kim, Gi-Seong Ryu, Paul Lee, Byungki Ryu, Jung Young Cho, Yong-Hoon Kim, Joohoon Kang, Hyungjun Kim, Yong-Young Noh, Myung-Gil Kim
Summary: This study reports the synthesis of highly conductive transparent p-type sulfur-doped CuI (CuI:S) thin film using a liquid-iodination method with a thiol additive. The CuI:S film exhibits a remarkably high electrical conductivity and optical transmittance, achieving a record-high figure of merit (FOM) value. The CuI:S electrode is successfully utilized in transparent electronic devices.
CHEMISTRY OF MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Wei Chen, Hui Zheng, Peng Zheng, Zhangting Wu, Feimei Wu, Yan Liu, Dexuan Huo, Liang Zheng, Yang Zhang
Summary: Nitrogen-doped ZnO nanodots/nitrogen-doped graphene layer nanohybrid is a promising material for optoelectronic applications and biosensing fields. High-quality p-type nitrogen-doped ZnO nanoparticles were successfully fabricated through a plasma heating process. The material exhibits good structural properties and excellent optical performance.
Article
Chemistry, Multidisciplinary
Karthik Kumar Chinnakutti, Lokanath Patra, Vengatesh Panneerselvam, Durai Govindarajan, Soorathep Kheawhom, Jayaraman Theerthagiri, Yiseul Yu, Shyju Thankaraj Salammal, Myong Yong Choi
Summary: Studies have shown that doping lithium into ZnSnN2 material can improve its performance and achieve p-type conductivity in photovoltaic devices.
MATERIALS TODAY CHEMISTRY
(2022)
Article
Materials Science, Multidisciplinary
Juhyung Seo, Teahyun Park, Hocheon Yoo
Summary: This study systematically investigates a solution processed zinc-tin-oxide film and obtains suitable turn-on voltage and uniform charge transport property. The film is applied to a complementary inverter logic and demonstrates excellent circuit performance.
ORGANIC ELECTRONICS
(2022)
Article
Chemistry, Physical
Xiao Hu Lv, Zhan Hua Li, Yuan Shen Qi, Tooru Tanaka, Qi Xin Guo, Kin Man Yu, Chao Ping Liu
Summary: Amorphous p-type transparent (Ga2O3)1-x(Cu2S)x alloy thin films with x<-0.5 have been successfully synthesized by magnetron sputtering at room temperature in this study. The optical bandgap decreases from -4.8 eV to -2.5 eV with increasing x, while the hole concentration N increases from 1019 cm-3 to -2 x 1021 cm-3, with a hole mobility of -0.3 cm2 V-1 s-1. The hole transport in these amorphous alloys follows the variable-range-hopping mechanism in the temperature range of 120-300 K. The upshift of the valence band maximum (VBM) position by -3 eV with x > 0.2 enhances the p-type conductivity of the films. These amorphous p-type transparent (Ga2O3)1-x(Cu2S)x alloy thin films show potential significance in bipolar device applications, such as Ga2O3 based p-n heterojunction power devices and high-efficiency solar cells.
APPLIED SURFACE SCIENCE
(2023)
Article
Materials Science, Multidisciplinary
Mi Zhong, Wei Zeng, Fu-Sheng Liu, Dai-He Fan, Bin Tang, Qi-Jun Liu
Summary: A screening strategy was formulated to identify promising p-type transparent conducting materials, resulting in the identification of three candidates with excellent properties. Defect calculations provided strong support for the established criterion for assessing p-type performance, indicating potential for further exploration and design of advanced functional materials.
MATERIALS TODAY PHYSICS
(2022)
Article
Nanoscience & Nanotechnology
Ke Shi, Boyang Zhang, Kaiwei Liu, Jifang Zhang, Guijun Ma
Summary: This paper investigates a promising candidate material, Rh/BaTiO3, for solar water splitting. By switching BaTiO3 from an n-type photoanode to a p-type photocathode through Rh doping, the material exhibits enhanced visible light absorption and higher onset potential. The study also demonstrates the successful implementation of unbiased solar water splitting with excellent stability.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Materials Science, Multidisciplinary
Ruibin Xue, Gang Gao, Lei Yang, Liangge Xu, Yumin Zhang, Jiaqi Zhu
Summary: In this study, composite films of CuI-Cu2O were successfully developed, with improved surface morphology and electronic properties. The optimized CuI-Cu2O films demonstrated good transparency, low hole concentration, high hole mobility, and high conductivity. Additionally, the electrical properties of CuI-Cu2O films exhibited greater stability compared to pure CuI films.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Materials Science, Multidisciplinary
Lingxiao Ma, Chenhao Dong, Wenquan Li, Erqing Xie, Wei Lan
Summary: Heavy-ion irradiation is an effective method to enhance the thermoelectric performance of semiconductor films, resulting in increased electrical conductivity and power factor while maintaining a high Seebeck coefficient.
Article
Materials Science, Multidisciplinary
Mochamad Januar, Suhendro Purbo Prakoso, Sen-Yao Lan, Rama Krushna Mahanty, Shou-Yi Kuo, Kou-Chen Liu
JOURNAL OF MATERIALS CHEMISTRY C
(2015)
Article
Chemistry, Multidisciplinary
M. Januar, A. Sulaiman, L. T. Handoko
JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE
(2013)
Article
Chemistry, Physical
Mochamad Januar, Bei Liu, Jui-Ching Cheng, Koji Hatanaka, Hiroaki Misawa, Hui-Hsin Hsiao, Kou-Chen Liu
JOURNAL OF PHYSICAL CHEMISTRY C
(2020)
Article
Nanoscience & Nanotechnology
Mochamad Januar, Suhendro Purbo Prakoso, Chia-Wen Zhong, Horng-Chih Lin, Chuan Li, Jang-Hsing Hsieh, Kuo-Kang Liu, Kou-Chen Liu
Summary: This paper demonstrates a fully room-temperature fabrication of p-type SnOx thin films with high mobility using ion-beam-assisted deposition. The technique allows independent control of ion density and energy, optimizing the optical band gap and hole mobility of the films. The absence of annealing process prevents microcrystal formation and improves the performance of the films.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Bei Liu, Mochamad Januar, Jui-Ching Cheng, Koji Hatanaka, Hiroaki Misawa, Kou-Chen Liu
Summary: The article discusses the importance of matching the resonant wavelength of plasmonic nanoparticles with the emission band of organic materials for optimal plasmon-enhanced luminescence in OLEDs. It introduces a design strategy using AuxAg1-x alloy NPs to enable resonance tuning while preserving NP size. Bimetallic NPs, especially with x < 0.6, provide additional degrees of freedom for plasmon wavelength variation and offer benefits of higher scattering and more intense electric fields compared to monometallic NPs.
Article
Engineering, Electrical & Electronic
Mochamad Januar, Chun-Wen Cheng, Wen-Kai Lin, Vito Vito, Meng-Chyi Wu, Shu-Tong Chang, Kou-Chen Liu
Summary: Through quantum chemistry simulations and trap-limited conduction model, the study found that TFTs with Sm2O8 gate dielectric outperform those with HfO2 gate dielectric due to lower density of localized states, leading to higher mobility and improved threshold voltage and subthreshold swing.
IEEE TRANSACTIONS ON NANOTECHNOLOGY
(2021)
