Effect of gallium content on bias stress stability of solution-deposited Ga–Sn–Zn–O semiconductor transistors

标题
Effect of gallium content on bias stress stability of solution-deposited Ga–Sn–Zn–O semiconductor transistors
作者
关键词
-
出版物
THIN SOLID FILMS
Volume 519, Issue 18, Pages 6164-6168
出版商
Elsevier BV
发表日期
2011-04-20
DOI
10.1016/j.tsf.2011.04.030

向作者/读者发起求助以获取更多资源

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started