Fabrication and electrical properties of metal-oxide semiconductor capacitors based on polycrystalline p-CuxO and HfO2/SiO2 high-κ stack gate dielectrics

标题
Fabrication and electrical properties of metal-oxide semiconductor capacitors based on polycrystalline p-CuxO and HfO2/SiO2 high-κ stack gate dielectrics
作者
关键词
-
出版物
THIN SOLID FILMS
Volume 518, Issue 15, Pages 4446-4449
出版商
Elsevier BV
发表日期
2010-02-12
DOI
10.1016/j.tsf.2010.02.015

向作者/读者发起求助以获取更多资源

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search