4.4 Article Proceedings Paper

Effect of oxygen flow rate on ITO thin films deposited by facing targets sputtering

期刊

THIN SOLID FILMS
卷 518, 期 22, 页码 6241-6244

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ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2010.03.041

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Tin-doped indium oxide (ITO); Oxygen flow rate; Facing target sputtering; Resistivity

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Tin-doped indium oxide (ITO) thin films were deposited on glass substrates at various oxygen flow rates using a planar magnetron sputtering system with facing targets. In this system, the strong internal magnets inside the target holders confine the plasma between the targets. High resolution transmission electron microscopy revealed a combination of amorphous and crystalline phases on the glass substrate. X-ray photoelectron spectroscopy suggested that the decrease in carrier concentration and increase in mobility were caused by a decrease in the concentration of Sn(4+) states. The electrical and optical properties of the ITO films were examined by Hall measurements and UV-visible spectroscopy, which showed a film resistivity and transmittance of 4.26 x 10(-4) Omega cm, and >80% in the visible region, respectively. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.

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