期刊
THIN SOLID FILMS
卷 516, 期 5, 页码 576-579出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2007.06.176
关键词
hot-wire CVD; nc-Si : H; phosphine; diborane; doping; plastics; low-temperature deposition
Gas-phase phosphorous and boron doping of hydrogenated nanocrystalline thin films deposited by HWCVD at a substrate temperature of 150 degrees C on flexible-plastic (polyethylene naphthalate, polyimide) and rigid-glass substrates is reported. The influence of the substrate, hydrogen dilution, dopant concentration and film thickness on the structural and electrical properties of the films was investigated. The dark conductivity of B- and P-doped films (sigma(d)=2.8 S/cm and 4.7 S/cm, respectively) deposited on plastic was found to be somewhat higher than that found in similar films deposited on glass. n- and p-type films with thickness below similar to 50 nm have values of crystalline fraction, activation energy and dark conductivity typical of doped hydrogenated amorphous silicon. This effect is observed both on glass and on plastic substrates. (C) 2007 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据