期刊
APPLIED PHYSICS LETTERS
卷 97, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3483616
关键词
annealing; electron mobility; gallium compounds; hole mobility; indium compounds; invertors; MIS devices; organic compounds; organic-inorganic hybrid materials; semiconductor materials; semiconductor-insulator boundaries; thin film transistors; zinc compounds
资金
- National Science Council (NSC) [NSC 99-2221-E-009-116]
Ambipolar thin film transistors (TFTs) with InGaZnO/pentacene heterostructure channels are demonstrated for a high-voltage-gain complementary metal oxide semiconductor (CMOS) inverter. The ambipolar TFT exhibits a electron mobility of 23.8 cm(2)/V s and hole mobility of 0.15 cm(2)/V s for the InGaZnO and pentacene, respectively. The thermal annealing process was also studied to adjust electron concentration reducing operating voltage of the CMOS inverter. The voltage gain achieves as high as 60 obtained in the first and third quadrants of the voltage transfer characteristic. The high performance and simple manufacture of the heterostructure CMOS inverter show promise as critical components in various electrical applications. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483616]
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